一种HEMT器件可缩放的非线性紧凑模型  

A scalable non-linear compact model applied to HEMT devices

作　　者：陈勇波[1] 刘文[1] 汪昌思 孔欣[1] 赵佐 CHEN Yongbo;LIU Wen;WANG Changsi;KONG Xin;ZHAO Zuo(The 29th Research Institute of China Electronics Technology Group Corporation,Chengdu Sichuan 610036,China;Chengdu HiWafer Semiconductor Co.,Ltd.,Chengdu Sichuan 610299,China)

机构地区：[1]中国电子科技集团公司第二十九研究所,四川成都610036 [2]成都海威华芯科技有限公司,四川成都610299

出　　处：《太赫兹科学与电子信息学报》2019年第1期162-168,共7页Journal of Terahertz Science and Electronic Information Technology

摘　　要：提供了一种应用于高电子迁移率晶体管(HEMT)的非线性紧凑模型。该模型针对传统的EE-HEMT模型理想缩放规律不准确的问题,提出采用一元函数拟合、二元曲面拟合方法,对其尺寸缩放和温度缩放规律进行修正。修正后的非线性模型可以准确地模拟HEMT器件的直流I-U、S参数和大信号特性。并将该模型应用于一款0.25μm栅长的GaAs pHEMT工艺,对比不同尺寸的器件在高低温条件下模型仿真结果和实测结果,两者吻合良好,验证了该模型的准确性。A scalable Enterprise Edition High Electron Mobility Transistor(EE-HEMT)based nonlinear model is presented.One dimensional function fitting as well as binary surface fitting methods are employed to rectify the original ideal scaling routines of EE-HEMT model,which makes this new model scale with device dimension and temperature more precisely and capable of predicting the Direct Current(DC)I-U,S-parameters and large signal performance.The accuracy of the model has been proved by comparing the simulation results with the measurement data of a 0.25μm GaAs pHEMT process under different ambient temperatures for various device dimensions.

关 键 词：EE-HEMT模型 高电子迁移率晶体管 非线性模型 紧凑模型 

分 类 号：TN386[电子电信—物理电子学]