硅(100)晶面各向异性腐蚀的凸角补偿方法  

Convex corner compensation method of anisotropic etching in (100) crystal surface of silicon

作　　者：郭玉刚 吴佐飞 田雷 GUO Yu-gang;WU Zuo-fei;TIAN Lei(AECC Aero Engine Control System Institute,Wuxi 214063,China;The 49th Research Institute of China Electronics Technology Group Corporation,Harbin 150001,China)

机构地区：[1]中国航发控制系统研究所,江苏无锡214063 [2]中国电子科技集团公司第四十九研究所,黑龙江哈尔滨150001

出　　处：《传感器与微系统》2019年第3期25-27,共3页Transducer and Microsystem Technologies

摘　　要：针对单晶硅(100)晶面在氢氧化钾(KOH)腐蚀液中各向异性腐蚀时的削角问题,进行了一项凸角补偿实验。通过不同尺寸与形状组合的〈110〉条形补偿结构,对长方形凸台进行补偿,最终获取具有期望效果的补偿结构。该方法应用于压力传感器芯片的过载保护结构设计。A convex corner compensation experiment of anisotropic etching in(100)crystal surface of silicon is proposed.The rectangle boss is compensated by〈110〉strips with different dimension and shape,and finally the expected compensation structure is obtained.The compensation method is used for design of overload protection structure in pressure sensor.

关 键 词：各向异性腐蚀 削角腐蚀 凸角补偿 过载保护 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]