BST薄膜的制备工艺与太赫兹介电特性测试  

Preparation Technology and Terahertz Test of BST Thin Film Devices

作　　者：董博文 马华[1] 王军[1] 娄菁 冯明德[1] DONG Bowen;MA Hua;WANG Jun;LOU Jing;FENG Mingde(Department of Basic Sciences,Air Force Engineering University,Xi'an 710051,China)

机构地区：[1]空军工程大学基础部,西安710051

出　　处：《电子工程学院学报》2019年第3期21-26,共6页Journal of The College of Electronic Engineering

基　　金：国家自然科学基金(61671467).

摘　　要：经过多组对比实验,通过XRD、AFM、SEM等表征手段优化了BST薄膜的制备工艺。结合BST基薄膜器件的电极制备、微结构加工制备了太赫兹频段电可调的频率选择表面。通过太赫兹测试系统验证了在太赫兹频段BST薄膜的可调性,在电场作用下通带频率可以从0.85THz调节到0.87THz,结合仿真研究给出了确定铁电薄膜在THz频段介电参数的方法。相关研究可用于精确测定铁电薄膜在THz频段的介电特性,为铁电薄膜功能器件的研制提供精确的介电参数测试方法。The preparation technology of BST thin film,electrode preparation,microstructure fabrication and terahertz band measurement method of BST thin film devices are systematically studied.The optimum preparation process of BST thin films is obtained by XRD,AFM and SEM.The electrically tunable frequency selective surface(FSS)in terahertz band is fabricated by electrode fabrication and microstructure fabrication of BST-based thin film devices.Under condition of the action in electric field,the pass-band frequency is adjusted from 0.85 THz to 0.87 THz,proving the tune-ability of BST thin films in THz band,and the method to determine the dielectric parameters of ferroelectric thin films in THz band is given.The related research can be used to accurately measure the dielectric properties of ferroelectric thin films in THz band,and provide accurate dielectric parameters for the development of functional devices of ferroelectric thin films.

关 键 词：钛酸锶钡薄膜 太赫兹 介电特性 工艺参数 磁控溅射 

分 类 号：O484[理学—固体物理] O441[理学—物理]