InAs/GaSb Ⅱ类超晶格台面的ICP刻蚀研究  

Study on ICP dry etching of type Ⅱ InAs/GaSb superlattices infrared focal plane arrays

作　　者：许佳佳[1,2] 黄敏 徐庆庆 徐志成[1] 王芳芳[1] 白治中[1] 周易[1] 陈建新[1] 何力[1] XU Jia-Jia;HUANG Min;XU Qing-Qing;XU Zhi-Cheng;WANG Fang-Fang;BAI Zhi-Zhong;ZHOU Yi;CHEN Jian-Xin;HE Li(Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院上海技术物理研究所中国科学院红外成像材料与器件重点实验室,上海200083 [2]中国科学院大学,北京100049

出　　处：《红外与毫米波学报》2019年第2期171-174,共4页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金(61534006)~~

摘　　要：报道了采用Cl_2/N_2电感耦合等离子(ICP)组合体刻蚀工艺在InAs/GaSb Ⅱ类超晶格红外焦平面台面加工过程中的研究结果,实验采用分子束外延技术在GaSb衬底上生长的PIN型超晶格材料。结果表明,气体流量比例直接对刻蚀速率和刻蚀形貌产生影响,氯气含量越高,刻蚀速率越大,当氮气含量增加,刻蚀速率降低并趋于一定值。当氯气和氮气的流量比例和等离子腔体内压力等参数一定时,随着温度升高,刻蚀速率和选择比在有限范围内同时线性增大,台面的倾角趋于直角,台面轮廓层状纹理逐渐消失,但沟道内变得粗糙不平,并出现坑点。在实验研究范围内,电感耦合等离子源的ICP功率和RF功率对刻蚀结果产生的影响较小。The results of a Cl2/N2 inductively coupled plasma(ICP)reactive ion etching process on InAs/GaSb superlattices infrared focal plane arrays were reported.A standard PIN device structure based on GaSb substrate was applied in all samples grown by molecular beam epitaxy.The etching results including etching rate and mesa sidewall profile were affected by gas flowratios directly,The higher the chlorine content was,the higher the etching rate was.When the nitrogen content increases,the etching rate decreases and tends to a certain value.When other parameters such as chamber pressure et al.were fixed,the etching rate and selection ratio increased linearly with temperature increasing.The mesa tended to be right angle,and the layered texture profile gradually disappeared,while the channel became rough and even pitted.Within the scope of this study,ICP and RF power had little effect on the etching results.

关 键 词：电感耦合等离子 刻蚀 InAs/GaSbⅡ类超晶格 焦平面 

分 类 号：TN304.2[电子电信—物理电子学] TN305