利用刻蚀工艺制备碲镉汞雪崩光电二极管  

HgCdTe avalanche photo diode fabricated by ion beam etching

作　　者：李浩[1,2] 林春 周松敏[1] 王溪[1] 孙权志[1] LI Hao;LIN Chun;ZHOU Song-Min;WANG Xi;SUN Quan-Zhi(Key Laboratory of Infrared Imagining Material and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院上海技术物理研究所红外成像材料与器件重点实验室,上海200083 [2]中国科学院大学,北京100049

出　　处：《红外与毫米波学报》2019年第2期223-227,共5页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金(61705247)~~

摘　　要：碲镉汞雪崩光电二极管是第三代红外焦平面探测器的主要发展方向之一.提出一种利用离子束刻蚀工艺制备碲镉汞雪崩光电二极管器件的方法,并研究了截止波长、耗尽区厚度与器件增益的关系.利用此方法制备截止波长4. 8μm的中波器件在17 V反向偏置下增益可达1 000.对器件进行了噪声频谱测试,计算了其过剩噪声因子.HgCdTe avalanche photo diode(APD)is one of the developing trends of third generation infrared FPA detectors.This article presents a newmethod to fabricate HgCdTe APD by ion beam etching(IBE),and discusses the relation of gain to cutoff wavelength and depletion region thickness.A gain of 1 000 at a bias of 17 V and a cutoff wavelength of 4.8μm was achieved.The excess noise factor,F,is calculated after a noise spectrum test.

关 键 词：HGCDTE 雪崩光电二极管 离子束刻蚀 增益 过剩噪声因子 

分 类 号：TN215[电子电信—物理电子学]