超宽禁带AlN材料及其器件应用的现状和发展趋势  

Current Status and Development Trends of Ultra-Wide Bandgap AlN Materials and Their Application in Devices

作　　者：何君[1] 李明月[1] He Jun;Li Mingyue(The 13th Research Institute, CETC, Shijiazhuang 050051, China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2019年第4期241-250,256,共11页Semiconductor Technology

摘　　要：作为一种Ⅲ-Ⅴ族化合物半导体材料,AlN不仅具有超宽直接带隙(6.2 eV)、高热导率、高电阻率、高击穿场强、优异的压电性能和良好的光学性能,而且AlN晶体还与其他Ⅲ-N材料具有非常接近的晶格常数和热膨胀系数。这些特点决定了AlN在GaN外延、紫外光源、辐射探测器、微波毫米波器件、光电器件、电力电子器件以及声表面波器件等领域具有广阔的应用前景。介绍了AlN材料在功率器件、深紫外LED、激光器、传感器以及滤波器等领域的应用现状,并对AlN材料及其应用的未来发展趋势进行了分析和展望。As one of the Ⅲ-Ⅴ compound semiconductor materials, AlN has properties of ultra-wide direct bandgap(6.2 eV), high thermal conductivity, high electrical resistivity, high breakdown field strength, excellent piezoelectric properties and good optical properties, and AlN crystals have very close lattice constants and thermal expansion coefficients with other Ⅲ-N materials. These characteristics determine the broad application prospects of AlN in the fields of GaN epitaxial, ultraviolet light source, radiation detector, microwave/millimeter wave devices, optoelectronic devices, power electronic devices and surface acoustic wave devices. The application status of AlN material in power electronic devices, deep ultraviolet LEDs,LDs, sensors and filters is introduced. Future development and application trends of AlN materials are analyzed and forecasted.

关 键 词：ALN 超宽禁带 光电器件 电力电子器件 声表面波(SAW)器件 

分 类 号：TN304.23[电子电信—物理电子学]