寄生电感对低压增强型GaN HEMT开关行为的影响  

Influence of Parasitic Inductance on Switching Behavior of Low Voltage E-Mode GaN HEMT

作　　者：彭子和 秦海鸿[1] 修强 张英[1] 荀倩 Peng Zihe;Qin Haihong;Xiu Qiang;Zhang Ying;Xun Qian(College of Automation Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, China;Division of Electric Power Engineering, Chalmers University of Technology, Goteborg 999034, Sweden)

机构地区：[1]南京航空航天大学自动化学院,南京211106 [2]查尔姆斯理工大学电力工程系,瑞典哥德堡999034

出　　处：《半导体技术》2019年第4期257-264,共8页Semiconductor Technology

基　　金：国家自然科学基金资助项目(51677089);中央高校基本科研业务费专项资金资助项目(NJ20160047);江苏高校优势学科建设工程资助项目;江苏省研究生科研与实践创新计划项目(KYCX18_0287);南京航空航天大学研究生创新基地(实验室)开放基金资助项目(kfjj20170308)

摘　　要：寄生电感是影响功率管开关特性的重要因素之一,开关频率越高,寄生电感对低压增强型氮化镓高电子迁移率晶体管(GaN HEMT)的开关行为影响越深,使其无法发挥高速开关的性能优势。通过建立数学模型,理论分析了考虑各部分寄生电感后增强型GaN HEMT的开关过程,并推导了各阶段的持续时间和影响因素,然后通过建立双脉冲测试平台,对各部分寄生电感对开关特性的具体影响进行了实验验证。实验结果表明,寄生电感会使开关过程中的电流、电压出现振荡,影响开关速度和可靠性,并且各部分寄生电感对增强型GaN HEMT的开关过程影响程度不同,在实际PCB布局受到物理限制时,需要根据设计目标优化布局,合理分配各部分寄生电感以获得最优的开关性能。Parasitic inductance is one of the most important factors affecting the switching characte-ristics of power transistors. And it has a larger influence on the switching behavior of low voltage E-mode gallium nitride high electron mobility transistors(GaN HEMT) with the increase of switching frequency, which limits full utilization of performance advantages of high speed switching in high frequency applications. By establishing mathematical model, the detailed switching process of E-mode GaN HEMT with each parasitic inductance was analyzed theoretically. The duration and influence factors of each stage were derived. A double-pulse test platform was built to confirm individual influence of each parasitic inductance on switching characteristics by the experiment. The test results show that the parasitic induc-tance will induce the oscillation in current and voltage during the switching process and affect the switching speed and reliability. Moreover, each parasitic inductance has different effects on the switching process of E-mode GaN HEMT. Due to physical limits of practical PCB layout, it is necessary to optimize the layout and distribute each parasitic inductance reasonably according to the design requirements to obtain the best switching performance.

关 键 词：增强型氮化镓(GaN)HEMT 开关行为 寄生电感 双脉冲测试 优化布局 

分 类 号：TN304[电子电信—物理电子学]