纳米尺寸AlGaN/GaN MIS-HEMT的栅电容模型  

A Gate Capacitance Model of Nano-scale AlGaN/GaN MIS-HEMT

作　　者：朱兆旻 刘顺 罗俊琦 ZHU Zhaomin;LIU Shun;LUO Junqi(College of Electronics and Information Engineering,Qinzhou University,Qinzhou 535011,China)

机构地区：[1]钦州学院电子与信息工程学院,广西钦州535011

出　　处：《钦州学院学报》2019年第3期38-41,54,共5页Journal of Qinzhou University

摘　　要：AlGaN/AlN/GaN金属-绝缘层-半导体高电子迁移率器件(MIS-HEMT)的栅电容模型是基于对GaN界面二维电子气(2DEG)浓度n_s的公式推导,求解过程中采用牛顿-拉夫逊迭代法并给出了近似的解析解。模型中的二维电子气浓度同数值模拟结果进行了比较,误差小于3%;电容模型跟实测的电容电压(C-V)特性进行了比较,误差小于10%。In this study,the gate capacitance model of AlGaN/AlN/GaN metal-insulator-semiconductor high electron mobility device(MIS-HEMT)is based on the formula for the two-dimensional electron gas(2DEG)concentration ns of GaN interface,and Newton-Raff is used in the solution process.The iterative method is given and the approximate analytical solution is given.The two-dimensional electron gas concentration in the model is compared with the numerical simulation results,the error rate is less than 3%;the capacitance model is compared with the measured capacitance voltage(C-V)characteristics,and the error rate is less than 10%.

关 键 词：HEMT 费米能级 C-V特性 高电子迁移率晶体管 二维电子气 

分 类 号：TN386[电子电信—物理电子学]