4H-SiC PIN二极管的正向特性计算模型  

A Calculation Model of Forward Characteristics for 4H-SiC PIN Diode

作　　者：张满红[1] 曹正春 ZHANG Manhong;CAO Zhengchun(Department of Electronic Science and Technology ,North China Electric Power University ,Beijing,102206 ,CHN)

机构地区：[1]华北电力大学电子科学与技术系,北京102206

出　　处：《固体电子学研究与进展》2019年第2期86-90,共5页Research & Progress of SSE

摘　　要：提出了一种基于双极性扩散方程的PIN二极管的一维物理计算模型。该模型主要针对PIN二极管的正向温度特性研究,考虑了载流子扩散系数、载流子迁移率、禁带变窄效应、载流子寿命随温度变化的影响。介绍了双极性扩散方程的傅里叶级数解,利用方程的傅里叶级数解推导得到一组微分方程,并采用迭代法求解。利用该模型计算分析了4H-SiC PIN二极管在298～498 K温度下的正向电学特性,分析了PIN二极管的PN结处的电子电流和空穴电流的分布,结合SILVACO-TCAD仿真软件,设计了一种器件结构,仿真结果与计算模型基本吻合。最后结合实验数据验证了模型的准确性。A one-dimensional physical calculation model of PIN diode based on ambipolar diffusion equation was proposed.The model mainly focused on the forward temperature characteristics of PIN diodes.The effects of carrier diffusion coefficient,carrier mobility,band gap narrowing and carrier lifetime by temperature were taken into account.The Fourier series solution of the ambipolar diffusion equation was introduced.A set of differential equations was derived using the Fourier series,and iterative method was used to solve them.The forward J-V characteristics of 4H-SiC PIN diodes are investigated by means of an analytical model in the 298~498 K temperature.The distribution of the electron current and hole current at the PN junction of the PIN diode are analyzed.A device structure is designed by using SILVACO-TCAD,the results of simulation and model are basically consistent.Finally,the accuracy of the model is verified by the experimental data.

关 键 词：4H-SIC PIN 正向特性 温度特性 SILVACO 

分 类 号：TN31[电子电信—物理电子学]