应用于MOEMS集成的TSV技术研究  

Research of Through Silicon Via Technology for Micro-Opto-Electro-Mechanical System Integration

作　　者：胡正高 盖蔚[1] 徐高卫[3] 罗乐[1,2] HU Zhenggao;GAI Wei;XU Gaowei;LUO Le(State Key Laboratory of Transducer Technology,Shanghai Instituteof Microsystem and Information Technology(SIMIT),Chinese Academy of Sciences(CAS),Shanghai200050,China;State Key Laboratory of Functional Materials for Informatics,Shanghai Institute ofMicrosystemand Information Technology(SIMIT),Chinese Academy of Sciences(CAS),Shanghai200050,China;University of Chinese Academy of Sciences,Beijing100049,China)

机构地区：[1]中国科学院上海微系统与信息技术研究所传感技术联合国家重点实验室,上海200050 [2]中国科学院大学,北京100049 [3]中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050

出　　处：《传感技术学报》2019年第5期649-653,共5页Chinese Journal of Sensors and Actuators

基　　金：国家自然科学基金项目(61701486);国家科技重大专项项目(2018ZX02103)

摘　　要：硅通孔(TSV)通过缩短互连长度可实现低延迟、低功耗等目的。对应用于微光机电系统(MOEMS)集成的TSV工艺进行了研究,通过ICP-DRIE参数优化获得了陡直TSV通孔;通过金-金键合及bottom-up法,实现了TSV的无缺陷填充;对填充后的TSV进行电学表征,测试结果表明,单个TSV的电阻平均值为0.199Ω、相邻两个TSV的电容在无偏压时为170.45 fF、TSV的漏电流在100 V时为9.43 pA,具有良好的电学特性。Through silicon via(TSV)can achieve low latency and low power consumption by shortening the interconnection length. TSV technology applied to MOEMS integration was studied. The steep TSV was obtained by ICP-DRIE parameter optimization. Through the Au-Au bonding and bottom-up method,no void TSV was realized. After filling,electrical characterization of TSV was carried out. The test results show that the average resistance of a single TSV is 0.199 Ω,the capacitance of two adjacent TSVs is170.45 fF without bias,and the leakage current of TSV is 9.43 pA at100 V,which indicate the good electrical characterization of TSV.

关 键 词：硅通孔(TSV) 微光机电系统(MOEMS) ICP刻蚀 键合 电镀 

分 类 号：TN305.94[电子电信—物理电子学]