GaN基功率电子器件及其应用专辑特邀主编述评  

Editorial on the Special Issue of GaN-based Power Electronic Devices and Their Applications

作　　者：刘扬 杨旭[2,6,7] LIU Yang;YANG Xu(School of Electronics and Information Technology,Sun Yat-Sen University;School of Electrical Engineering,Xi’an Jiaotong University)

机构地区：[1]中山大学电子与信息学院 [2]西安交通大学电气工程学院 [3]中山大学电力电子及控制技术研究所、广东省第三代半导体GaN材料与器件工程技术研究中心 [4]IEEE功率半导体器件及集成电路国际会议(ISPSD)技术程序委员会 [5]IEEE电子器件学会(EDS)功率器件与集成电路委员会、中国电源学会、中国电源学会元器件专委会、中国电工学会电力电子分会、中国有色金属学会宽禁带半导体专业委员会 [6]中国电工技术学会电力电子技术专委会、电气节能专委会 [7]中国电源学会直流电源专委会

出　　处：《电源学报》2019年第3期1-3,共3页Journal of Power Supply

摘　　要：GaN基功率电子器件因其具有开关速度快、开关频率高、工作结温高、通态电阻小、开关损耗低等优势,适合应用于新型高效、大功率等的电力电子系统。国内关于GaN基功率电子器件的研究已经取得了较为明显的进展,但与发达国家相比仍有一定的差距。为此,《电源学报》特别推出了“GaN基功率电子器件及其应用”专辑,基本涵盖GaN功率电子器件及其应用研究的热点问题,展示了不同研究机构和企业在该领域的研发现状,具有良好的学术研究和应用参考价值。Owing to their fast switching speed, high switching frequency, satisfying thermal properties, low turn-on resistance, low switching loss, etc., gallium nitride(GaN)-based power electronic devices can be applied to novel high-ef-ficiency and high-power power electronic systems. In China, there has been substantial progress in is field. However, compared with the studies conducted in developed countries, there still exists certain gap. In this background, Journal of Power Supply publishes a special issue of GaN-based power electronic devices and their applications, covering various hot issues and showing the research and development status of different research institutions and enterprises in this field. As such, this special issue provides reference materials for both academic research and application development.

关 键 词：氮化镓 功率电子器件 功率密度 通态电阻 开关损耗 主编述评 

分 类 号：TM23[一般工业技术—材料科学与工程]