1.55μm通信波段InAs/GaAs量子点制备方法研究  

Preparation Method of InAs/GaAs Quantum Dots for 1.55 μm Communication Band

作　　者：池振昊 王海龙[1] 倪海桥[2] 牛智川[2] CHI Zhen-hao;WANG Hai-long;NI Hai-qiao;NIU Zhi-chuan(Shandong Provincial Key Laboratory of Laser Polarization and Information Technology,Department of Physics,Qufu Normal University,Qufu Shandong 273165,China;State Key Laboratory for Superlattices and Microstructure,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100089,China)

机构地区：[1]山东省激光偏光与信息技术重点实验室曲阜师范大学物理系,山东曲阜273165 [2]中国科学院半导体研究所半导体超晶格国家重点实验室,北京100089

出　　处：《通信技术》2019年第6期1311-1315,共5页Communications Technology

基　　金：国家自然科学基金(No.61674096)~~

摘　　要：利用分子束外延技术在GaAs衬底上生长InAs量子点,采用梯度生长法实现了量子点的成岛参数和量子点密度精确可控。通过在GaAs衬底上生长InGaAs组分渐变缓冲层进而自组织外延InAs量子点的方法,将GaAs衬底的InAs量子点发光波长拓展到了1550nm通讯波段,并研究了渐变层中最大In组分、以及InAs淀积量等因素对于量子点发光性能的影响。结果显示,渐变层最上层In组分越大,与InAs量子点的失配越小生长尺寸越大,量子点的发光波长越长,光致荧光谱呈现整体红移的趋势。在渐变缓冲层上外延InAs的淀积量为1.65ML时可以得到线宽较窄强度较高的单量子点发光峰。InAs quantum dots are grown on a GaAs substrate by MBE(molecular beam epitaxy).Gradient growth method is adopted to realize accurate control of islanding parameters and density of quantum dots.By growing the InGaAs metamorphic buffer layer on GaAs substrate and self-organizing epitaxial InAs quantum dots,the GaAs-based InAs quantum dot emission wavelength is extended to 1 550 nm communication band.The effects of the maximum In composition and the deposition amount of InAs on the luminescence properties of quantum dots are explored.The experiment results indicate that the larger the In component in the uppermost layer of the gradient layer,the smaller the mismatch between the InAs quantum dots and the larger the growth size,the longer the luminescence wavelength of the quantum dots,and the photoluminescence spectrum shows a trend of overall red shift.When the deposition amount of InAs on the tapered buffer layer is 1.65 ML,the single quantum dot emission peak with narrower linewidth and higher intensity can be obtained.

关 键 词：INAS/GAAS 自组织量子点 分子束外延 通信波段 

分 类 号：TN304[电子电信—物理电子学]