Heteroepitaxy of semiconductor thin films  

作　　者：Yi Gu 

机构地区：[1]State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences [2]Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2019年第6期4-5,共2页半导体学报（英文版）

摘　　要：The heteroepitaxy of semiconductor thin films is a cornerstone of semiconductor devices and is naturally preferred to grow on matched substrates from the view point of material epitaxy. However, the heteroepitaxy is always performed on mismatched substrates due to the limited choices of mature substrates, which constrains the quality of semiconductor thin films.

关 键 词：HETEROEPITAXY SEMICONDUCTOR DEVICES MATERIAL EPITAXY 

分 类 号：TN[电子电信]