探针加力对电阻率测量的影响  

The Influence of Probe Pressure on Resistivity Measurement

作　　者：李万策 张继荣 LI Wance;ZHANG Jirong(The 46th Research Institute of CETC,Tianjin 300220,China)

机构地区：[1]中国电子科技集团公司第四十六研究所

出　　处：《电子器件》2019年第3期591-594,599,共5页Chinese Journal of Electron Devices

摘　　要：电阻率是半导体材料的重要电学参数之一,对于最常见的硅单晶材料而言,也将直接影响到其功能特性。通过对单晶施加的不同探针加力得到所测量单晶的电阻率相对标准偏差与相对误差,探讨四探针法测量连续硅单晶电阻率的准确度问题。150gf加力下测试标准偏差相较于其他加力降幅明显,但120gf加力下测试相对误差相比于其他测试加力降幅最大可达1%。因此120gf加力附近时,探针与硅片表面的接触相对另外选取几个加力选取值来说可以达到最优状态。Resistivity is one of the most important electrical parameters of semiconductor materials.For the most common silicon single crystal materials,it will directly affect their functional properties.The relative standard deviation and relative error of the resistivity of the measured single crystal are obtained by the different probe applied force applied to the single crystal,and the accuracy of the four probe method for measuring the resistivity of continuous silicon single crystal is discussed.The standard deviation under 150 gf applied force decreases significantly compared with other applied force,but the relative error under 120 gf applied force decreases by up to 1% under other applied force.Therefore,the contact between the probe and the silicon wafer surface can reach an optimum state near 120 gf applied force compared with several other applied force selections.

关 键 词：电阻率 探针加力 相对误差 四探针 硅单晶 

分 类 号：TN307[电子电信—物理电子学]