无凹槽AlGaN/GaN肖特基势垒二极管正向电流输运机制  

Forward Current Transport Mechanism of Recess-Free AlGaN/GaN Schottky Barrier Diodes

作　　者：吴昊 康玄武[2] 杨兵 张静[1] 赵志波[1,2] 孙跃 郑英奎 魏珂[2] 闫江[1] Wu Hao;Kang Xuanwu;Yang Bing;Zhang Jing;Zhao Zhibo;Sun Yue;Zheng Yingkui;Wei Ke;Yan Jiang(College of Information Science, North China University of Technology , Beijing 100144, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China)

机构地区：[1]北方工业大学信息学院,北京100144 [2]中国科学院微电子研究所,北京100029

出　　处：《半导体技术》2019年第6期426-432,共7页Semiconductor Technology

基　　金：国家自然科学基金资助项目(61804172);国家重点研发计划资助项目(2017YFB0403000);科技部专项;北京市自然科学基金资助项目(4182021)

摘　　要：研究了无凹槽AlGaN/GaN肖特基势垒二极管(SBD)的正向电流输运机制。分别采用Ni/Au和TiN作为阳极金属材料制备了无凹槽AlGaN/GaN SBD,对比了两种SBD的直流特性。并通过测量器件的变温I-V特性,研究了器件的正向电流输运机制。结果表明,TiN-SBD(0.95 V@1 mA·mm^(-1))与Ni/Au-SBD(1.15 V@1 mA·mm^(-1))相比实现了更低的开启电压,从而改善了正向导通特性。研究发现两种SBD的势垒高度和理想因子都强烈依赖于环境温度,通过引入势垒高度的高斯分布模型解释了这种温度依赖性,验证了正向电流输运机制为与势垒高度不均匀分布相关的热电子发射机制。The forward current transport mechanism of the recess-free AlGaN/GaN Schottky barrier diodes ( SBDs) were studied. Recess-free AlGaN/GaN SBDs were fabricated by using Ni/Au and TiN as anode metal materials respectively, and the DC characteristics of two kinds of SBDs were compared. The forward current transport mechanism of the devices were studied by measuring the voltage-current characteristics at different temperatures. The results show that compared with the Ni/Au-SBD (1.15 V @1 mA·mm^-1), a lower turn-on voltage of the TiN-SBD ( 0. 95 V@ 1 mA·mm^-1 ) is achieved and the forward conduction characteristic is improved. It is found that the potential barrier height and ideality factor of both SBDs are strongly depend on the ambient temperature. The temperature dependence is explained by introducing the Gaussian distribution model of the potential barrier height, and the forward current transport mechanism is verified as the thermionicemission mechanism related to the inhomogeneous distribution of the potential barrier height.

关 键 词：ALGAN/GAN 肖特基势垒二极管(SBD) 正向电流输运机制 TIN 势垒高度 无凹槽 

分 类 号：TN311.7[电子电信—物理电子学] TN304.2