高功率半导体激光器红外缺陷发射与热效应  

Infrared Defect Emission and Thermal Effect in High Power Diode Lasers

作　　者：越方禹[1] 毛峰[1] 王涵[1] 张小玲[1] 陈晔[1] 敬承斌[1] 褚君浩[1,2] Yue Fangyu;Mao Feng;Wang Han;Zhang Xiaoling;Chen Ye;Jing Chengbin;Chu Junhao(Key Laboratory of Polar Materials and Devices,Ministry of Education,Department of Optoelectronics,School of Inform ation Science Technology,East China Normal University,Shanghai 200241,China;National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China)

机构地区：[1]华东师范大学信息学院光电系极化材料与器件教育部重点实验室,上海200241 [2]中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083

出　　处：《激光与光电子学进展》2019年第11期1-9,共9页Laser & Optoelectronics Progress

基　　金：国家自然科学基金(61790583,61874043,61775060,61874045)

摘　　要：高功率半导体激光器具有效率高、寿命长、体积小,及成本低等优点,在国防军事、材料加工和抽运源等领域具有广泛应用。阐述了镓砷/GaAs基近红外波段激光器和镓氮/GaN基蓝绿光波段激光器的缺陷类型、发射特征,以及相关研究进展,通过聚焦商用器件,利用变条件分波段发射谱及其热像,展示了与缺陷相关的发射信号来源和空间分布,分析了内部光学损伤(COD)动力学,指出了现有“外COD”模型在解释器件热退化机理上的局限性。High power laser diodes(HPLDs)have been widely used in the defense sector,material processing,and pumping sources,considering their advantages such as high efficiency,long lifetime,small size,and low cost.This study describes the types and emission characteristics of the defects and the related advances in GaAs-based near infrared lasers and GaN-based blue-green lasers.By focusing on the commercial devices and using the conditionvariable emission spectra for separated wavebands and the corresponding thermal imaging,the origination and spatial distribution of the emission signals related to the defects are determined.The internal catastrophic optical damage(COD)mechanism is also analyzed.Furthermore,the limitation of the current“external COD”model for interpreting the thermal evolution mechanism of the devices is pointed out.

关 键 词：激光器 高功率半导体激光器 红外缺陷发射 热效应 

分 类 号：O474[理学—半导体物理]