具有ITO/Ti3O5薄膜结构的高亮度AlGaInP LED  

High Brightness AlGaInP Light-emitting Diode with ITO/Ti3O5 Membrane Structure

作　　者：孙学智[1] 白继锋 SUN Xuezhi;BAI Jifeng(Jilin Vocational College of Industry and Technology,Jilin,Jilin,132000,CHN;Kingsoon Co.,Ltd.,Nanchang,330000,CHN)

机构地区：[1]吉林工业职业技术学院,吉林吉林132000 [2]南昌凯迅光电有限公司,南昌330000

出　　处：《固体电子学研究与进展》2019年第3期199-202,共4页Research & Progress of SSE

基　　金：吉林省教育科学“十三五”规划2018年度课题(GH180885)

摘　　要：采用ITO/Ti3O5薄膜结构作为高亮度AlGaInP LED的电流扩展层、窗口层、电流阻挡层和增透膜层。通过在电极下形成肖特基结,避免电极下方无效电流注入,提高局域电流密度。通过ITO/Ti3O5增透膜设计提升LED的光提取效率。具有该ITO/Ti3O5薄膜结构的主波长621nm的高亮度AlGaInP LED芯片(150μm×150μm)较传统结构芯片发光强度提升40%,20mA注入电流下,电压均值在2.1V左右。ITO/Ti3O5 membrane structure was used as the current spreading layer, the window layer, the current blocking layer and the antireflection film layer of a high-brightness AlGaInP LED. By forming a Schottky junction under the electrode, the invalid current injection could be avoided, the local current density was improved. The light extraction efficiency was improved by the designing of ITO/Ti3O5 antireflective film. It was found that the luminous intensity of AlGaInP LED chip(150 μm×150 μm) with the ITO/Ti3O5 thin film structure is up 40% than traditional structure chip,and the average voltage is around 2.1 V at 20 mA injection current for dominant wavelength of 621 nm.

关 键 词：ALGAINP ITO 电流扩展 肖特基结 

分 类 号：TN248.4[电子电信—物理电子学]