立方结构PbSe薄膜在六角硒化镉单晶(0001)表面的外延生长研究  

Epitaxial Growth and Interfacial Microstructures of PbSe Thin Film on CdSe Substrate

作　　者：潘棋 王健[2] 任羿烜 范旭东 程红娟 刘兴钊[1] Pan Qi;Wang Jian;Ren Yixuan;Fan Xudong;Cheng Hongjuan;Liu Xingzhao(State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Electronic Science and Engineering,University of Electronics Science and Technology of China, Chengdu 610054, China;The 46th Research Institute of CETC, Tianjin 300220, China)

机构地区：[1]电子薄膜与集成器件国家重点实验室电子科学与工程学院电子科技大学,成都610054 [2]中国电子科技集团公司第46研究所,天津300220

出　　处：《真空科学与技术学报》2019年第7期562-565,共4页Chinese Journal of Vacuum Science and Technology

摘　　要：采用分子束外延技术在六角铅锌矿结构CdSe单晶基片(0001)表面生长了立方结构PbSe薄膜,通过对所生长PbSe薄膜的X射线衍射(XRD)及透射电镜(TEM)分析,阐明了所生长立方PbSe薄膜与六角纤锌矿结构CdSe(0001)的外延关系,高分辨率TEM分析结果显示:CdSe基片与PbSe薄膜之间界面清晰,PbSe薄膜的晶体结构完整,其电子衍射谱的各级衍射斑点无明显畸变;XRD分析结果显示:所生长立方PbSe薄膜为(100)取向,PbSe薄膜与CdSe单晶的面内外延关系为PbSe[110]//CdSe[100],并呈现出三种不同面内取向晶粒镶嵌排列的微观结构,这表明:虽然六角铅锌矿结构CdSe(0001)面与立方PbSe(100)面具有不同的对称性,但仍能生长出高质量的PbSe薄膜,并为PbSe薄膜的应用奠定了可能。The cubic-structured PbSe thin films were epitaxially grown in molecular beam epitaxy reactor onhexagonal-structured CdSe(0001) substrate.The interfacial microstructures were characterized with X-ray diffraction and high resolution transmission electron microscopy.The preliminary results show that in spite of the different symmetries and the lattice mismatch between PbSe(100) and CdSe(0001),the well-defined,highly epitaxial interfacial structures were synthesized.To be specific,the PbSe[110]//CdSe(00[1010] epitaxial relationship exists.The PbSe thin films showed mosaic characteristics with in-plane PbSe grains grown in three preferential orientations;and the grain boundaries make an angle of 30°.We suggest that the PbSe thin films epitaxially grown on CdSe(0001) substrate may be of some technological interest in fabrication of optoelectronic devices.

关 键 词：PBSE CDSE 薄膜 分子束外延 

分 类 号：TN304.054[电子电信—物理电子学]