具有高击穿电压的AlN背势垒AlGaN/GaN/AlN HEMT材料  

High Breakdown Voltage AlGaN/GaN/AlN HEMT Material with AlN Back Barrier

作　　者：王波[1] 高楠 郭艳敏[2] 尹甲运[2] 张志荣[1] 袁凤坡 房玉龙[2] 冯志红[2] Wang Bo;Gao Nan;Guo Yanmin;Yin Jiayun;Zhang Zhirong;Yuan Fengpo;Fang Yulong;Feng Zhihong(The 13th Research Insititute,CETC,Shijiazhuang 050051,China;Science and Technology on ASIC Laboratiry,Shijiazhuang 050051,China;Hebei Key Lab of New Semiconductor Optoelectronic Devices,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]专用集成电路重点实验室,石家庄050051 [3]河北省新型半导体光电子器件重点实验室,石家庄050051

出　　处：《微纳电子技术》2019年第9期704-708,719,共6页Micronanoelectronic Technology

基　　金：国家自然科学基金青年科学基金资助项目（61804139）;国家重点研发计划资助项目（2016YFB0400203)

摘　　要：采用金属有机化学气相沉积(MOCVD)技术在4英寸(1英寸=2.54cm)蓝宝石衬底上制备了1.2μm厚的AlN背势垒的AlGaN/GaN/AlN双异质结高电子迁移率晶体管(HEMT)材料,其AlGaN势垒层表面粗糙度(RMS)、二维电子气(2DEG)迁移率以及HEMT材料的弯曲度都较为接近于常规的高阻GaN背势垒结构的HEMT材料。由于AlN晶格常数较小,具有AlN背势垒的HEMT材料受到了更大的压应力。通过对比分析两种HEMT材料所制备的器件发现,受益于AlN背势垒层更高的禁带宽度和临界电场,由AlN背势垒HEMT材料所制备的器件三端关态击穿电压为常规高阻GaN背势垒HEMT器件的1.5倍,缓冲层漏电流则较常规高阻GaN背势垒HEMT器件低2~3个数量级。The AlGaN/GaN/AlN double-heterojunction high electron mobility transistor (HEMT)material with1.2μm thickness AlN back barrier was fabricated on the 4inch(1inch= 2.54 cm)sapphire substrate by metal organic chemical vapor deposition(MOCVD)technology. The AlGaN barrier layer surface roughness (RMS),two-dimensional electron gas (2DEG) mobility and HEMT material tortuosity of the fabricated HEMT material were close to those of the conventional HEMT material with high resistivity GaN back barrier.Due to the small lattice constant of AlN,the compressive stress of HEMT material with the AlN back barrier is larger. Two kinds of the devices fabricated by the two kinds of HEMT materials were compared and analyzed. The results show that benefiting from the higher band gap and critical electric field of the AlN back barrier,the three-terminal off-state breakdown voltage of the HEMT device with the AlN back barrier is 1.5 times of that of the conventional HEMT device with high resistance GaN back barrier,while the leakage current of the buffer layer is 2-3 orders of magnitude lower than that of the conventional high resistance GaN back barrier HEMT device.

关 键 词：氮化镓(GaN) 铝镓氮(AlGaN) 金属有机化学气相沉积(MOCVD) 背势垒 高电子迁移率晶体管(HEMT) 

分 类 号：O475[理学—半导体物理] TN304.07[理学—物理]