固贴式薄膜体声波谐振器性能受压电材料的影响分析  

Analysis of The Performance of Solidly Mounted Film Bulk Acoustic Resonator by Piezoelectric Materials

作　　者：鄂羽佳 陆晓欣[1] 王建东[1] 朱嘉琦[1] E Yujia;LU Xiaoxin;WANG Jiandong;ZHU Jiaqi(Harbin Institute of Technology,Harbin 150001,China)

机构地区：[1]哈尔滨工业大学

出　　处：《真空与低温》2019年第5期336-341,共6页Vacuum and Cryogenics

基　　金：国家自然科学基金(51072039,51222205);教育部新世纪人才项目(NCET-10-0070)

摘　　要：利用MathCAD软件对固贴式薄膜体声波谐振器(SMR-FBAR)器件建立数学模型进行仿真,分析了不同压电薄膜材料和厚度,不同电极材料和厚度对FBAR器件谐振特性的影响。采用射频磁控溅射方法制备氮化铝(AlN)薄膜,利用扫描探针显微镜中的压电力显微镜(PFM)模块对AlN薄膜的压电性能进行了测试。得到主要结论为:复合FBAR的谐振频率因为增加了电极厚度因素相比理想FBAR的谐振频率偏低;压电材料的机电耦合系数对器件带宽起决定性作用,器件的机电耦合系数正比于材料的机电耦合系数;AlN具有较高的压电系数,可以有效提升器件性能,增大带宽,适合作为压电薄膜材料;采用小尺寸压电薄膜和电极厚度有益于提高器件的频率。Mathcad software is used to simulate the mathematical model of the Solidly Mounted Film Bulk Acoustic Resonator(SMR-FBAR)device. The effects of different piezoelectric film materials and thickness,different electrode materials and thickness on the resonance characteristics of FBAR devices are analyzed. The aluminum nitride(AlN)film was prepared by RF magnetron sputtering. The piezoelectric properties of AlN film were tested by Piezoelectric Force Microscope (PFM). The resonant frequency of the composite FBAR is lower than the ideal resonant frequency due to the increased electrode thickness factor. The electromechanical coupling coefficient of the piezoelectric material plays a decisive role in the device bandwidth. The electromechanical coupling coefficient of the device is proportional to the electromechanical coupling coefficient of the material. AlN has a high piezoelectric coefficient,which can effectively improve device performance and increase bandwidth,and is suitable as a piezoelectric film material. Using small piezoelectric thin film and thin electrode is beneficial to increase the frequency of devices.

关 键 词：固贴式薄膜体声波谐振器 压电薄膜 磁控溅射 压电系数 

分 类 号：TB34[一般工业技术—材料科学与工程]