千瓦级硅LDMOS微波功率晶体管关键技术研究  

A Study on Key Technology of Kilowatt Si LDMOS Microwave Power Transistor

作　　者：黄乐旭 应贤炜[1] 梅海[1] 丁晓明[1] 杨建 王佃利[1] HUANG Lexu;YING Xianwei;MEI Hai;DING Xiaoming;YANG Jian;WANG Dianli(Nanjing Electronic Devices Institute,Nanjing 210016,China)

机构地区：[1]南京电子器件研究所

出　　处：《现代雷达》2019年第9期76-82,共7页Modern Radar

摘　　要：针对雷达、通信、遥控遥测等领域对硅横向扩散金属氧化物半导体(LDMOS)微波大功率管的迫切需求,开展了硅LDMOS微波功率晶体管的亚微米精细栅制作、低阻低应力钴硅合金、大尺寸芯片烧结及金属陶瓷全密封管壳平整度控制等关键技术研究,并取得了突破,研制出2 000 W硅LDMOS微波功率晶体管,漏源击穿耐压大于140 V,结到管壳热阻0.19℃/W。在50 V工作电压、230 MHz工作频率、脉宽为100μs、占空比为20%、输入功率为6 W的测试条件下,实现输出功率达到1 330 W,增益23.5 dB,漏极效率74.4%,电压驻波比10∶1。该晶体管已实现工程应用。Aiming at the urgent need of Si lateral diffusion metal-oxide-semiconductor(LDMOS) power device for radar, communication, remote control and telemetry system, key technology development has been performed and made breakthroughs, such as sub-micrometer narrow gate formation, low resistance and low stress cobalt solicitation, large size chip sinter, metal-ceramic sealed package flatness control and so on. A 2 000 W Si microwave power LDMOS transistor is fabricated, with drain-source breakdown voltage of more than 140 V and thermal resistance of junction to case of 0. 19 ℃/ W . Under the condition of 50 V supply voltage, 230 MHz operating frequency, 100 μs pulse width and 20% duty cycle, output power of 1 340 W, power gain of 23. 4 dB, drain efficiency of 74. 4%, and voltage standing wave ratio of 10:1 at all phase angles have been reached. The developed device has been applicated in projects.

关 键 词：硅横向扩散金属氧化物半导体 千瓦级 微波功率晶体管 

分 类 号：TB385[一般工业技术—材料科学与工程] TN386.1[电子电信—物理电子学]