深亚微米CMOS反相器的单粒子瞬态效应研究  

Study on Single Event Transient in a Deep Submicron CMOS Inverter

作　　者：高成[1] 张芮 王怡豪 黄姣英[1] GAO Cheng;ZHANG Rui;WANG Yihao;HUANG Jiaoying(School of Reliability and Systems Engineering,Beihang University,Beijing100191,P.R.China)

机构地区：[1]北京航空航天大学可靠性与系统工程学院

出　　处：《微电子学》2019年第5期729-734,共6页Microelectronics

基　　金：十三五计划微电子预研项目(6140002010202)

摘　　要：针对小尺寸CMOS反相器的单粒子瞬态效应,分别采用单粒子效应仿真和脉冲激光模拟试验两种方式进行研究。选取一种CMOS双反相器作为研究对象,确定器件的关键尺寸,并进行二维建模,完成器件的单粒子瞬态效应仿真,得到单粒子瞬态效应的阈值范围。同时,开展脉冲激光模拟单粒子瞬态效应试验,定位该器件单粒子瞬态效应的敏感区域,捕捉不同辐照能量下器件产生的单粒子瞬态脉冲,确定单粒子瞬态效应的阈值范围,并与仿真结果进行对比分析。Aiming at the single event transient effect of small size CMOS inverters,single event effect simulation and pulsed laser simulation experiments were carried out.A deep submicron CMOS inverter(SN74LVC2GU04)was selected as the research object.The key dimensions of the device were determined,and the two-dimensional model of the CMOS inverter was built.The single event transient effect simulation of the deep submicron CMOS device was completed,and the threshold range was obtained.At the same time,the experiment of single event transient by pulsed laser facility was carried out to locate the sensitive region of the device,capture the single event transient pulse generated by the device under different irradiation energy,determine the threshold range of the single event transient,and compare with the previous simulation of single event transient.

关 键 词：CMOS反相器 单粒子瞬态效应 TCAD仿真 脉冲激光试验 

分 类 号：TN406[电子电信—微电子学与固体电子学]