Cu-CMP抛光液中有机碱的化学作用实验分析  

The Experimental Analysis of Chemical Reaction of Organic Alkali in Cu-CMP Slurry

作　　者：王新[1] 康志龙[1] 刘玉岭[2] 

机构地区：[1]河北工业大学科研处,天津300130 [2]河北工业大学电气学院,天津300130

出　　处：《河北工业大学学报》2002年第5期31-34,共4页Journal of Hebei University of Technology

基　　金：河北省自然科学基金资助项目(502029)

摘　　要：分析了带有羟基和双胺基的有机碱在Cu-CMP过程中的化学作用.为得到抛光液的最佳配比,在给定的实验条件下对铜进行抛光实验,得到了铜的抛光速率随有机碱浓度的化学作用曲线,并得到了有机碱在抛光液中的最佳浓度.实验结果表明:随着抛光液中有机碱浓度的增加,抛光过程中的化学作用（络合反应）增强,铜的抛光速率随之增大,当有机碱增加到一定浓度时,抛光速率达到最高值,并相应得到了最佳的抛光表面.The chemical reaction by organic alkali with by hydroxide radicle and double amidocyanogen was analyzed in Cu-CMP process. In order to gained the best formulation of slurry, the experiments that copper was polished using organic alkali slurry on fixed conditions were done, in which the curve of chemical reaction between the concentration of organic alkali and polishing rate was find out. It was shown that the chemical action (complex reaction) was increased with adding organic alkali, concentration, as well as the polished rate was increased. When the concentration of organic alkali was added to the definite value, the polishing rate was the highest, and the best polishing surface was controlled.

关 键 词：Cu-CMP 抛光液 有机碱 化学作用 实验分析 

分 类 号：TG580.692[金属学及工艺—金属切削加工及机床]