连续波CO_2激光辅助AuGeNi-InP合金  

AuGeNi-InP Laser Assisted Aalloying Using CW CO_2 Laser

作　　者：叶玉堂[1] 吴云峰[1] 吴泽明[1] 杨先明[1] 范超 秦宇伟[1] 方勇文 郑华 李莹波 

机构地区：[1]电子科技大学光电子技术系,成都610054

出　　处：《光学学报》2002年第10期1263-1265,共3页Acta Optica Sinica

基　　金：总装备部预研基金;四川省科技厅资助课题

摘　　要：利用激光辅助合金的方法 ,生成InP表面AuGeNi InP合金 ,并形成良好的欧姆接触 ,上下表面面间电阻为5 .8Ω。研究了合金工艺参量 (如合金时间、合金温度、镀膜厚度等 )AuGeNi InP alloy on InP chip and good ohmic contact have been fabricated by means of laser assisted alloying. The minimum contact resistance between the two surfaces of InP substrate is as low as 5.8 Ω. According to the experimental result, influence of some important processing parameters (as alloying time, alloying temperature, the thickness of film, et al.) on ohmic contact are discussed.

关 键 词：AuGeNi-InP合金 激光辅助合金 欧姆接触 半导体化合物 工艺参数 微细加工 集成电路 连续CO2激光器 

分 类 号：TN405.9[电子电信—微电子学与固体电子学] TN249