硫化镉薄膜的制备新技术  

New Preparation Technique for Cadmium Sulfide(CdS)Thin Films

作　　者：张佐兰[1] 

机构地区：[1]东南大学微电子中心,南京21008

出　　处：《半导体光电》1992年第1期70-77,共8页Semiconductor Optoelectronics

摘　　要：CdS 是用于制作太阳电池和光电探测器等的Ⅱ—Ⅵ族化合物半导体材料之一。CdS薄膜制备方法有蒸发,溅射,化学汽相淀积等。实验证明其特性与制备方法有关,本文重点介绍 MOCVD 和离化淀积法制备 CdS 薄膜及其特性分析。Cadmium Sulfide(CdS)is one of Ⅱ—Ⅳ compound semiconductor mate- rials used for manufacturing solar cells and photodetetors,etc.CdS thin films can be prepared by such technique as evaporation,sputtering and chemical vapor deposition, etc.The experimental results show that the properties of the films depend on prepara- tion techniques.The paper reports mainly CdS films prepared by MOCVD and ionized deposition and property analysis is also emphasised.

关 键 词：硫化镉 薄膜 制备 光电器件 淀积 

分 类 号：TN304.25[电子电信—物理电子学]