双电流限制结构的1.55μm单模全金属化耦合封装激光二极管  

1.55μm Single Mode Fully-Metallized Coupling Packaged LD with Double Current Confinement Structure

作　　者：罗恩银[1] 杨正淮 赵新民[1] 

机构地区：[1]重庆光电技术研究所

出　　处：《半导体光电》1992年第1期44-50,共7页Semiconductor Optoelectronics

摘　　要：叙述了具有双电流限制结构的1.55μm InGaAsP/InP 隐埋新月形激光器的制造工艺和主要特性。在室温 CW 工作条件下,该激光二极管的最低阈值电流为20mA,典型值为30mA。可在2～3倍阈值电流下获得稳定的基横模输出。在室温 CW 工作下,管芯的最大光输出功率大于10mW。激光器组件由半导体致冷器,热敏电阻和 PIN 探测器组成,采用了标准的14针双列直插式管壳,实现了激光器组件的全金属化耦合封装,漏气率小于5×10^(-3)Pa·cm^2/s,尾纤输出功率典型值为1mW。Fabrication technology and characteristics of 1.55μm InGaAsP/InP buried croscont LD with double current confinement structure are described. The minimum CW threshold current(I_(th))of the LD is 20mA at room tempe- ratue,with the typical value of 30mA.A stable fundamental transverse-mode is obtained at(2～3)I_(th).The maximum optical output of the chip is over 10mW at CW room temperture.The LD module consists of a thermoelectric cooler,a ther- mistor and a PIN-PD with the standard hermetic 14-pin DIL package.The leak rate is better than 5×10^(-3)Pa·cm^2/s,with the typical value of pigtail fiber output optical power of 1mW.

关 键 词：激光二极管 全金属化耦合 封装 

分 类 号：TN248.4[电子电信—物理电子学]