PICTS方法研究SI-GaAs中深能级缺陷性质  

Investigation of Deep-Level Defects in LEC SI-GaAs by PICTS

作　　者：龚大卫[1] 陆昉[1] 孙恒慧 

机构地区：[1]复旦大学物理系,上海200433

出　　处：《Journal of Semiconductors》1992年第1期1-7,共7页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：本文用 PICTS方法配合退火实验对各种 LEC SI-GaAs材料的缺陷进行了测量,对照文献已有的各种结果,分析和讨论了一些缺陷的成因和可能结构.认为其中的W_1 可能是与As_(Ga)有关的 EL3缺陷,W_4为热应力产生的缺陷.P_1 与V_(Ga)有关.在原生富砷样品的PICTS谱中存在负峰N,实验发现它的存在与样品表面状况无关.若考虑该缺陷同时与两种载流子作用,理论计算与实验符合较好.在有些样品中用PICTS方法观察到EL2峰,对于原生样品,发现经快速退火后EL2的体内浓度减小.Deep-level defects in some undoped LEC SI-GaAs materials have been investigated byphoto-induced current transient spectroscopy(PICTS). The thermal behavior of these defects isreported and some of possible structures are suggested.In particular, W_3 (Ea=0.61eV) mightbe associated with As_(Ga), P1(Ea=0.54eV), with V_(Ga) and W_4(Ea=0.68eV) may be created bythermal stress. The negative-peak observed in sample A is discussed, and it may be due to theemission from certain deep level to both bands. In some materials,EL2 is observed, and its con-centration in bulk can be reduced by rapid thermal annealing.

关 键 词：SI-GAAS 深能级 缺陷 PICTS法 测量 

分 类 号：TN304.26[电子电信—物理电子学]