Ge_xSi_(1-x)/Si应变层超晶格X-射线双晶衍射的运动学研究  

Double Crystal X-ray diffraction study of Ge_xSi_(1-x)/Si Strained-Layer Superlattices by Kinematical approach

作　　者：段晓峰[1] 冯国光[1] 王玉田[2] 褚一鸣 刘学锋[1] 盛篪[3] 周国良[3] 

机构地区：[1]中国科学院北京电子显微镜实验室,北京100080 [2]中国科学院半导体研究所,北京100083 [3]上海复旦大学表面物理实验室,上海200433

出　　处：《Journal of Semiconductors》1992年第1期14-21,共8页半导体学报（英文版）

摘　　要：本文利用X射线双晶衍射对应变层超晶格进行了研究.我们从超晶格的台阶模型出发,运用运动学理论,推导出了X射线衍射强度的表达式,清楚地揭示了合金成分x,应变,层厚比与迴摆曲线强度分布的关系.对Ge_xSi_(1-x)/Si超晶格双晶X射线衍射强度的模拟结果与实验结果符合很好.Strain in the strained-layer Superlatrice is Studied by double Crystal X-ray diffraction.Based on the step model of superlattice,a simple expression relating strain to the struc-ture of the rocking curve has been derived using kinematical approach.Simulations for theGe_xSi_(1-x)/Si Strained-layer Superlattice are in good agreement with the experimental rockingcurves.Ge_xSi_(1-x)/Si Superlattice, x-ray diffraction,Double crystal x-ray diffraction, Rocking Curve,Molecular beam epitaxy (MBE).

关 键 词：GESI/SI 超晶格 双晶衍射 运动学 

分 类 号：TN304.12[电子电信—物理电子学]