黄昆X射线漫散射的实验研究  

Experimental Investigation of Huang X-ray Diffuse Scattering

作　　者：蒋四南[1] 

机构地区：[1]中国科学院半导体研究所中国科学院半导体材料科学实验室,北京100083

出　　处：《Journal of Semiconductors》1992年第2期75-83,共9页半导体学报（英文版）

摘　　要：本文描述了黄昆X射线漫散射的实验方法及其所需的实验条件,并利用它研究了离子注入CaAs中点缺陷所引起的黄昆散射,在同一GaAs晶片上的不同部分分别注入Mo和Er,浓度均为1×10^(15)cm^(-2),注入电压为500keV,经850℃退火30分钟后分别在77K的条件下进行黄昆散射测量,实验观测到注入Er元素比Mo元素引起的黄昆散射要强,这一结果表明Er元素在GaAs中大多处于间隙状态,而Mo元素在GaAs中大多处于替换状态.The experimental method of Huang x-ray diffuse scattering has been described and hasbeen used to study point defects created by ion implantation of GaAs wafer.Mo and Er ionsimplantation were made at the different region of one GaAs wafer with the same condition(500keV, 1 ×10^(15)cm^(-2)), It was observed that the different ions implantation on GaAs wafer were ex-hibited quite different Huang diffuse scattering close to (400) face diffraction Bragg peak ofGaAs. Huang diffuse scattering of Er-GaAs was larger than that of Mo-GaAs.This fact maybe resulted from that Er is as interstitial atom and Mo is as substituting atom in GaAs lattice.

关 键 词：黄昆X射线 半导体晶体 漫散射 实验 

分 类 号：O471.4[理学—半导体物理]