GaAs衬底上生长的Ga_(0.5)In_(0.5)P外延层中的近红外光致发光对激发强度的依赖关系  

Excitation Intensity Dependence of Near-Infrared Photoluminescence in Ga_(0.5)In_(0.5)P Grown on GaAs Substrate

作　　者：赵家龙[1] 高瑛[1] 刘学彦[1] 苏锡安 梁家昌[2] 关兴国[3] 章其麟[3] 

机构地区：[1]中国科学院长春物理研究所,长春130021 [2]中国民用航空学院,天津300300 [3]河北半导体研究所,石家庄050051

出　　处：《Journal of Semiconductors》1992年第4期236-241,共6页半导体学报（英文版）

基　　金：国家自然科学基金;中国科学院长春物理研究所激发态物理开放实验室基金

摘　　要：本文首次报道了利用金属有机化学气相沉积(MOCVD)方法在GaAs衬底上生长的有序的Ga_(0.5)In_(0.5)P外延层的近红外光致发光的研究,并观测到深能级产生的三个发光峰,其峰值能量分别为 1.17,0.99和 0.85eV.根据它们的近红外发光光谱随着激发强度的变化关系,我们证实这些发光都是由于施主-受主对复合产生的发光.The investigation of near-infrared photoluminescence (PL) in the ordered Ga_(0.5) In_(0.5)Pgrown on GaAs substrate by metalorganic chemical vapor deposition (MOCVD) is reportedfor the first time. Three PL peaks from the deep levels are observed, and their peak energiesare 1.17, 0.99 and 0.85eV, respectively. We further study the relationship between the near-infrared PL spectra and the excitation intensity. The results demonstrate that three PL peaksare originated from donor-acceptor pair recombination (DAP).

关 键 词：衬底 外延生长 红外光谱 强度 

分 类 号：TN304.054[电子电信—物理电子学]