用质量分离的低能离子束外延法生长β-FeSi_2半导体外延膜的初步研究  

Study on Growth of Semiconducting β-FeSi_2 Epitaxial Thin Films by Mass-Analyzed Low Energy Ion Beam Epitaxy

作　　者：姚振钰[1] 任治璋 王向明[1] 刘志凯[1] 黄大定[1] 秦复光[2] 林兰英[2] 

机构地区：[1]中国科学院半导体研究所,北京100083 [2]中国科学院半导体研究所半导体材料科学实验室,北京100083

出　　处：《Journal of Semiconductors》1992年第8期518-521,共4页半导体学报（英文版）

摘　　要：采用质量分析的低能离子束外延法生长了半导体性质的β-FeSi_2外延薄膜.就我们所知,在用同类方法的研究中,国际上尚属首次.AES测量及RHEED观察肯定了外延的β-FeSi_2的存在;垂直入射的光透射谱又证实了外延膜是具有直接禁带的、禁带宽度为～0.84 eV的半导体性质的薄膜.室温下的霍耳迁移率μH达600 cm^2V^(-1)s^(-1),比文献报道高两个量级.Semiconducting β-FeSi_2 epitaxial thin films have been grown hy Mass-Analyzed Low Energy lon Beam Epitaxy (MALE-IBE, or IBE) for the first time. The existance of β-FeSi_2 epitaxialfilms and its stoichiometry are confirmed by RHEED and AES, respectively. Normal incidencespectral transmittance data showed a narrow direct energy gap of 0.84ev of Semiconductingβ-FeSi_2. The Hall morbility μ_H is about 600 cm^2·V^(-1)S^(-1) at room temperature, which is the highestvalue achieved up to now as we know.

关 键 词：离子束外延法 FeSi2 半导体 薄膜 

分 类 号：TN304.905[电子电信—物理电子学]