多孔硅量子约束效应导致的红外多光子激发荧光  

Efficient Infrared-upconversion Luminescence in Porous Silicon: Quantum-confinement Induced Effect

作　　者：王健 蒋红兵 王文澄[1] 郑家骠 张甫龙[2] 郝平海[2] 侯晓远[2] 王迅[2] 

机构地区：[1]复旦大学三束材料改性国家重点实验室,上海200433 [2]复旦大学应用表面物理国家重点实验室,上海200433

出　　处：《Journal of Semiconductors》1992年第12期773-776,共4页半导体学报（英文版）

摘　　要：采用超短脉冲近红外光(1.06μm)激发,首先在多孔硅表面观察到了较强的可见区荧光产生.荧光强度与激发光强度的三次方关系表明,有效的荧光产生起源于三阶非线性光学效应的增强.对多孔度低的样品观察不到这种荧光发射.通过与多孔硅的紫外光(355 nm)激发谱的比较,我们把这种有效的多光子激发过程归结为来源于多孔硅的量子约束效应.We demonstrate for the first time that the porous silicon layer(PSL) which has a brightlight-emission band in the range 500--700nm, exhibits a strong visible-range luminescenceunder the illumination of infrared ultrashort-pulsed laser. The intensity dependence of integ-rated luminescence on pump power shows that this is a third-order nonlinear optical effect.By comparing with UV-light-excited spectra of PSL and samples with low porosity which haveinefficient luminescence, a possible explanation that the large nonlinear optical response is dueto the quantum-confinement effect has been proposed.

关 键 词：多孔硅 光子激发 荧光 

分 类 号：TN304.12[电子电信—物理电子学]