GaAs/InP异质材料及MESFET器件研究  

The Study of GaAs/InP Heteroepitaxy and MESFET

作　　者：陈小红[1] 陈松岩[1] 张玉清[2] 林爱清[1] 陈丽容[1] 邓彩玲[1] 

机构地区：[1]厦门大学物理系,福建厦门361005 [2]信息产业部电子第十三研究所,河北石家庄050051

出　　处：《厦门大学学报（自然科学版）》2002年第6期759-763,共5页Journal of Xiamen University：Natural Science

基　　金：国家自然科学基金 (6 0 0 0 6 0 0 4);福建省自然科学基金 (A0 110 0 0 6 )资助项目

摘　　要：用低压金属有机气相外延 (LP MOCVD)在InP衬底上生长出较高质量的GaAs材料 ,并对材料进行Raman、光致发光 (PL)谱的测试分析 ,结果表明在GaAs InP外延层中存在伸张应力致使Raman的LO模式的频率红移 ;PL谱峰较强 ,16K下测到GaAs的特征激子峰和杂质相关的激子峰 ,表明了GaAs外延层的晶体质量较好 .以此生长方法制备了金属 半导体场效应晶体管 (MESFET) ,其单位跨导可达 2 0 0ms mm .High quality GaAs epilayers have been grown on InP substract by low pressure metal organic vapour phase epitaxy (LP-MOVPE). The measurement of Raman and PL spectra of GaAs epilayer have been carried out, which show a red shift of the LO mode resulting from the stretching stress in the GaAs epilayer; Strong PL spectrum peak, GaAs charateristic excition peak and corresponding impurity excition peak have also been detected at 16 K, which indicates the crystal is in good quality. As a result, the GaAs metal semiconductor field effect transistors (MESTET) with the transconductance of 200 ms/mm have been fabricated. The performance of our MESFET can be compared with that of the GaAs. homogeneity structure.

关 键 词：MESFET器件 GaAs/InP异质材料 光致发光谱 RAMAN谱 金属-半导体场效应晶体管 Ⅲ-Ⅴ族化合物半导体材料 

分 类 号：TN304.23[电子电信—物理电子学] TN386