氟化非晶碳薄膜的光学带隙分析  

Optical gap of fluorinated amorphous carbon films

作　　者：叶超[1] 宁兆元[1] 程珊华[1] 王响英[2] 

机构地区：[1]苏州大学物理系,苏州215006 [2]苏州大学基础医学系,苏州21500

出　　处：《物理学报》2002年第11期2640-2643,共4页Acta Physica Sinica

基　　金：江苏省高等学校省级重点实验室开放课题 (批准号 :KJS0 10 12 );国家自然科学基金 (批准号 :10 175 0 48)资助的课题

摘　　要：研究了CHF3 C6 H6 沉积的氟化非晶碳 (α C∶F)薄膜的光学带隙 .发现α C∶F薄膜光学带隙的大小取决于薄膜中C—F ,CC的相对含量 .这是由于CC形成的窄带隙π键和C—F形成的宽带隙σ键含量的相对变化 ,改变了带边态密度分布的结果 .在微波功率为 1 4 0— 70 0W、沉积气压为 0 1— 1 0Pa、源气体CHF3 ∶C6 H6 流量比为 1∶1— 1 0∶1条件下沉积的α C∶F薄膜 ,光学带隙在 1 76— 3The optical band gap of fluorinated amorphous carbon (α C∶F) films, prepared by microwave electron cyclotron resonance plasma chemical vapor deposition using trifluromethane (CHF 3) and benzene (C 6H 6) as source gases, are investigated. The optical band gap E g of α C∶F films, deposited at an input microwave power of 140—700 W, pressure of 0 1—1 0 Pa and CHF 3/C 6H 6 ratio of 1∶1—10∶1, are in the range of 1 76—3 98 eV. We found that the optical band gap is dependent on the amount of C—F and CC bondings in the films. This is due to the decrease in the content of π bonding, causing the optical band gap to become narrow, and the increase in the content of σ bonding.

关 键 词：氟化非晶碳薄膜 光学带隙 键结构 α-C:F薄膜 

分 类 号：O484.41[理学—固体物理]