MPCVD低温沉积金刚石薄膜及其特征  

Low Temperature Deposition and Characterization of Diamond Thin Films by MPCVD+

作　　者：吕反修[1] 杨保雄[1] 蒋高松[1] 

机构地区：[1]北京科技大学材料系

出　　处：《北京科技大学学报》1992年第2期168-175,共8页Journal of University of Science and Technology Beijing

基　　金：国家高技术发展项目

摘　　要：应用微波等离子体辅助的化学气相沉积(MPCVD)工艺成功地实现了金刚石薄膜在700-790℃范围内的低温沉积.发现氧在CH_4-H_2系统中的引入不仅可以减小或消除Raman谱上位于1550cm^(-1)的非金刚石特征峰,而且还使位于1332cm^(-1)的金刚石特征峰半高宽显著减小。正是由于原子态氧在较低温度下具有远比原子态氢强烈得多的对石墨和类金刚石碳的刻蚀作用,才用金刚石的低温生长得以顺利进行。本文详细报导了金刚石薄膜低温沉积工艺及其所得薄膜的表征结果,并就Bachmann等最近提出C-H-O金刚石相图针对低温沉积数据进行了讨论。Low temperature deposition of diamond thin films in the range of 700-300℃ has been successfully carried out by microwave plasma assisted CVD technique. It was found that the introduction of oxygen into the system of CH4-H2 not only lowered or even eliminated the diffused peak at 1550cm-1 caused by non-diamond phases, but also reduced the half height width of the diamond peak at 1332cm-1. It was because that the atomic oxygen did have a much stronger etching effect on graphite and diamond-like carbon than that of atomic hydrogen at relatively low temperatures, could the low temperature gro- wth of diamond from the vapour phase become possible. Low temperature deposition and characterization of the resultant diamond films are reported in detail. An attempt to link the low temperature deposition data to the C-H-O phase diagram recently proposed by Bachmann et al. has also been made.

关 键 词：金刚石薄膜 低温沉积 微波等离子体 

分 类 号：O484.1[理学—固体物理]