LDD后热处理工艺对28 nm PMOSFET短沟道效应的影响  

Impaction of Post-LDD Anneal to 28nm PMOSFET Short Channel Effect

作　　者：朱巧智 刘巍 李润领 ZHU Qiaozhi;LIU Wei;LI Runlai(Shanghai Huali Integrated Circuit Corporation,Shanghai 201314,China.)

机构地区：[1]上海华力集成电路制造有限公司,上海201314

出　　处：《集成电路应用》2019年第8期34-36,共3页Application of IC

基　　金：上海市经济和信息化委员会软件和集成电路产业发展专项基金(1500204)

摘　　要：Si MOSFET作为大规模集成电路的基础,沟道长度是决定其运行速度和集成度的重要参数。随着Si MOSFET器件尺寸不断缩小,短沟道效应(即器件阈值电压随沟道长度减小不断降低的现象)越来越严重。基于28 nm低功耗逻辑平台,研究了LDD后热处理工艺对PMOSFET器件短沟道效应的影响及物理机制。实验结果表明,通过优化热处理温度,可以显著改善PMOSFET器件短沟道效应,实现在较低pocket离子注入剂量下达到同样阈值电压的目的。TCAD工艺及器件仿真结果表明,热处理温度调节器件短沟道效应的主要物理机制是其对pocket离子注入杂质激活率的影响。Si MOSFET is the basic building block of large-scale integrated circuits. MOSFET channel length is a critical parameter to decide the circuits speed and integration density.With the feature size of Si MOSFET scaling down, short channel effect(SCE, the phenomenon of threshold voltage decreases with gate length decreasing) is becoming more and more severe. Based on 28 nm low power logic platform, this work investigated the effect of post-LDD anneal to PMOSFET SCE. The results show that high temperature SPK anneal could effectively suppress PMOSFET SCE. TCAD simulation reveal that the mechanism of high temperature SPK suppressing SCE is due to pocket Ph active concentration increasing in channel.

关 键 词：集成电路制造 短沟道效应 PMOSFET pocket注入 热处理温度 

分 类 号：TN405[电子电信—微电子学与固体电子学]