近红外Mg2Si/Si异质结光电二极管的结构设计与仿真  

Structure Design and Simulation of Near-infrared Mg2Si/Si Heterojunction Photodiode

作　　者：陈豪 肖清泉 谢泉 王坤 史娇娜 CHEN Hao;XIAO Qingquan;XIE Quan;WANG Kun;SHI Jiaona(College of Big Data and Information Engineering,Guizhou University,Guiyang 550025)

机构地区：[1]贵州大学大数据与信息工程学院

出　　处：《材料导报》2019年第20期3358-3362,共5页Materials Reports

基　　金：国家自然科学基金(61264004);贵州省留学回国人员科技活动择优资助项目([2018]09);贵州省高层次创新型人才培养项目([2015]4015)~~

摘　　要：本工作设计了近红外Mg2Si/Si异质结光电二极管的器件结构,并采用Silvaco-TCAD对器件主要性能参数(包括光谱响应、暗电流等)进行模拟仿真,优化了器件的结构参数和工艺参数。仿真结果表明:所设计的pin型光电二极管在波长为0.6~1.5μm时比pn型光电二极管具有更高的响应度,峰值波长为1.11μm时,响应度最高达到0.742 A·W^-1,1.31μm处响应度为0.53 A·W^-1。pin型光电二极管的暗电流密度较pn型光电二极管略大,约为1×10^-6 A·cm^-2。Mg2Si/Si异质结中间界面态密度也不宜超过1×10^11 cm^-2。The device structure of a near-infrared Mg2Si/Si heterojunction photodiode was designed,and its main parameters of the device such as spectral responsivity,dark current density were simulated using Silvaco-TCAD software.The simulation results show that the Mg2Si/Si pin heterojunction photodiode is more sensitive in the spectral range of 0.6-1.5μm than Mg2Si/Si pn heterojunction photodiode.The peak wavelength of the photodiode is 1.11μm and the maximum spectral responsivity is 0.742 A·W^-1.The wavelength of 1.31μm still has a good responsivity of up to 0.53 A·W^-1.Dark current density of the pin photodiode is approximately 1×10^-6 A·cm^-2,which is slight bigger than that of the pn photodiode.The interface-state density of the Mg2Si/Si heterojunction should not exceed 1×10 11 cm^-2.

关 键 词：Mg2Si/Si异质结 光谱响应 暗电流密度 界面态密度 

分 类 号：TN302[电子电信—物理电子学]