Cr掺杂SnS2纳米花的微观结构与光学性能  

Microstructure and optical properties of Cr doped SnS2 nanoflowers

作　　者：赵文华 魏智强[1,2] 梁家浩 马龙 张旭东[2] 姜金龙[2] ZHAO Wen-hua;WEI Zhi-qiang;LIANG Jia-hao;MA Long;ZHANG Xu-dong;JIANG jin-long(State Key Laboratory of Advanced Processing and Recycling Nonferrous Metals,Lanzhou University of Technology,Lanzhou 730050,China;School of Science,Lanzhou University of Technology,Lanzhou 730050,China)

机构地区：[1]兰州理工大学省部共建有色金属先进加工与再利用国家重点实验室,兰州730050 [2]兰州理工大学理学院,兰州730050

出　　处：《中国有色金属学报》2019年第8期1693-1700,共8页The Chinese Journal of Nonferrous Metals

基　　金：国家自然科学基金资助项目(51261015);甘肃省自然科学基金资助项目(1308RJZA238)~~

摘　　要：以曲拉通为修饰剂,通过水热法合成花状Sn1-xCrxS2纳米晶(x=0、0.01、0.03、0.05和0.07),研究Cr掺杂浓度对样品的晶体结构、形貌和光学性能的影响。XRD、EDS和XPS结果表明,所有样品具有结晶良好的六方纤锌矿结构,Cr3+以替代Sn4+的形式掺杂进入到SnS2晶格中。随着Cr掺杂量的增加,晶格常数发生膨胀。紫外可见吸收光谱(UV-vis)发现掺杂样品的光学带隙发生蓝移现象。傅里叶红外光谱(FT-IR)的吸收峰位并没有随着掺杂浓度的增加而发生变化。掺杂SnS2样品的光致发光(PL)谱图出现紫光、蓝光、黄光和红光4个发光峰。随着掺杂浓度增加,发光强度呈现明显的减小趋势,以纳米花Sn0.95Cr0.05S2样品的最低。色度图CIE表明,Sn1-xCrxS2样品显示黄色荧光发光。With Cr doping concentration, the impact of performance on crystal structure, morphology and optical properties of the nanoflower-like Sn1-xCrxS2(x=0, 0.01, 0.03, 0.05 and 0.07) synthesized by hydrothermal method with triton as modifier were investigated. The XRD, EDS and XPS results show all the samples possess a well-crystallized hexagonal wurtzite structure, while the doping of Cr3+ in the sample is substituted in the form of Sn4+. The lattice constant expands with the increase of Cr doping. The UV-vis absorption spectra reveal the optical band gaps of doped samples occur blueshift. The absorption peak of Fourier transform infrared spectroscopy(FT-IR) do not change with increasing doping concentration. The photoluminescence(PL) spectra show that the SnS2 samples possess four peaks, which is purple, blue, yellow and red. The luminescence intensity of the Sn0.95Cr0.05S2 nanoflowers is the lowest with a significant decrease trend. CIE results demonstrate that the Sn1-xCrxS2 samples show yellow fluorescence emission.

关 键 词：CR掺杂 SnS2纳米花 稀磁半导体 微观结构 光学性能 

分 类 号：O472.5[理学—半导体物理]