SiC MOSFET短路检测与保护研究综述  

Review of Short-Circuit Detection and Protection of Silicon Carbide MOSFETs

作　　者：吴海富 张建忠[1] 赵进[1] 张雅倩 Wu Haifu;Zhang Jianzhong;Zhao Jin;Zhang Yaqian(Jiangsu Provincial Key Laboratory of Smart Grid Technology and Equipment Southeast University,Nanjing 210096 China)

机构地区：[1]江苏省智能电网技术与装备重点实验室(东南大学)

出　　处：《电工技术学报》2019年第21期4519-4528,共10页Transactions of China Electrotechnical Society

基　　金：国家自然科学基金（51577025）;江苏省智能电网技术与装备重点实验室课题资助项目

摘　　要：随着宽禁带半导体器件的发展,SiC MOSFET被广泛应用于工业领域,其短路保护也越来越多地为人们所重视。本文首先对SiC MOSFET的短路类型进行讨论,给出不同短路类型下的主要电路波形;然后本文对近年来SiC MOSFET短路检测与保护方法进行概述,详细介绍去饱和检测法、电感检测法、门极电压检测法以及基于罗氏线圈的短路检测法的原理,归纳总结各种检测方案的优缺点;最后提出一种降栅压短路保护电路,实现了SiC MOSFET在短路情况下的两级快速保护。With the development of wide bandgap semiconductor devices,SiC MOSFETs are widely used in the industrial field,and the short-circuit protection of SiC MOSFETs is also receiving more and more attention.In this paper,the short circuit types of SiC MOSFETs are discussed,and the key waveforms under different short circuit types are given.Then,this paper summarizes the short-circuit detection and protection methods of SiC MOSFETs in recent years.The principles of de-saturation detection,inductance detection,gate voltage detection and short circuit detection based on Rogowski coil are introduced in detail.The advantages and disadvantages of various detection schemes are summarized.Finally,a method of decreasing grid-voltage short-circuit protection is proposed,which realizes two-stage fast protection of SiC MOSFET under short circuit condition.

关 键 词：SIC MOSFET 短路保护 去饱和检测 降栅压 

分 类 号：TM93[电气工程—电力电子与电力传动]