SiN_x/SiO_xN_y叠层结构防潮能力的研究  

Research on Moisture Barrier Property of SiN_x/SiO_xN_y Stacks Structure

作　　者：许海飞 喻志农[1] 程锦[1] 栗旭阳 陈永华 李言 薛建设[2] XU Haifei;YU Zhinong;CHENG Jin;LI Xuyang;CHEN Yonghua;LI Yan;XU E Jianshe(School of Optics and Photonics*Beijing Institute of Technol.,Beijing 100081,CHN;Beijing BOE Optoelectronics Technol.Co.Ltd.,Beijing 100176,CHN)

机构地区：[1]北京理工大学光电学院,北京100081 [2]北京京东方光电科技有限公司,北京100176

出　　处：《半导体光电》2019年第5期643-648,共6页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(61675024)

摘　　要：研究了等离子体增强化学气相沉积(PECVD)工艺参数对SiNx及SiOxNy防潮能力的影响,并测试了SiNx/SiOxNy叠层薄膜的水汽渗透速率(WVTR)。实验结果表明:单层SiNx薄膜和SiOxNy薄膜都存在临界厚度,当膜厚大于临界值时,继续增大厚度不会明显改善薄膜的WVTR。当沉积温度从50℃提高到250℃,SiNx薄膜的WVTR从0.031g/(m^2·day)降至0.010g/(m^2·day)。SiOxNy沉积时,增大N2O通入量对薄膜的WVTR影响不明显,但可以有效改善薄膜的弯曲性能。最后,4个SiNx/SiOxNy叠层膜的WVTR下降到了4.4×10^-4 g/(m^2·day)。叠层膜防潮能力的显著提升归因于叠层结构可以有效解耦层与层之间的缺陷,延长水汽渗透路径。The influences of process parameters on the moisture barrier properties of SiNx and SiOxNy prepared by plasma enhanced chemical vapor deposition(PECVD)were investigated,and the water vapor permeation rate(WVTR)of SiNx/SiOxNy stacks film was tested.The results show that both the single-layer SiNxfilm and the SiOxNy film have a critical thickness.When the film thickness is greater than the critical value,increasing the thickness does not significantly improve the WVTR of the film.When the deposition temperature increased from50℃ to 250 ℃,the WVTR of the SiNxfilm decreased from 0.031 g/(m^2· day)to0.010 g/(m^2·day).When SiOxNy is deposited,increasing the N2 O flux does not affect the WVTR of the film,but it can effectively improve the bending properties of the film.Finally,the WVTR of the four stacks SiNx/SiOxNy films fell to 4.4×10^-4 g/(m^2·day).The significant improvement in moisture barrier capacity of the film is attributed to the fact that the stackstructure can effectively decouple the defects between the layers and extend the water vapor permeation path.

关 键 词：PECVD SINX SiOxNy 水汽渗透速率 叠层 弯曲 

分 类 号：TN383.1[电子电信—物理电子学]