L波段1.1 kW GaN射频功率放大器设计  

Design of 1.1 kW L-band GaN RF Power Amplifier

作　　者：景少红 钟世昌[1] 饶翰 曹建强 JING Shaohong;ZHONG Shichang;RAO Han;CAO Jianqiang(Nanjing Electronic Devices Institute,Nanjing,21QQ16,CHN)

机构地区：[1]南京电子器件研究所

出　　处：《固体电子学研究与进展》2019年第5期324-328,共5页Research & Progress of SSE

摘　　要：基于南京电子器件研究所0.5μm GaN HEMT工艺平台,设计了一款SiC衬底的1.2~1.4 GHz 1.1 kW GaN功率放大器。以管芯S参数和负载牵引测试结果进行匹配电路设计,采用双胞55 mm GaN管芯实现大功率输出。功率放大器内部采用预匹配网络设计,外部匹配网络采用多级高低阻抗微带线结构。该功率放大器在1.2~1.4 GHz频带内,漏电压60 V、脉冲宽度100μs、占空比10%测试条件下,输出功率达到1.1 kW,功率增益大于15.5 dB,功率附加效率大于70%。Based on NEDI 0.5μm GaN HEMT process platform,a GaN power amplifier of 1.2~1.4 GHz 1.1 kW SiC substrate was designed.The matching circuit was designed by the results of S-parameters and load-pull measurement.Using two 55 mm GaN dies,the transistor demonstrated high power.A pre-matching network was used in the transistor,while many series high-low impedance micro-strip line structures were employed in the out matching networks.Under the drain voltage of 60 V and the pulse condition(100μs pulse width,10%ratio),during the operation frequency band of 1.2 GHz to 1.4 GHz,the output power of the power amplifier is higher than 1.1 kW,the power gain is more than 15.5 dB,and the PAE is higher than 70%.

关 键 词：GAN高电子迁移率晶体管 SIC衬底 负载牵引 L波段 高功率 高效率 

分 类 号：TN323.4[电子电信—物理电子学] TN385