碳化硅半导体技术及产业发展现状  

Status of Silicon Carbide Semiconductor Technology

作　　者：葛海波 夏昊天 孙冰冰 GE Haibo;XIA Haotian;SUN Bingbing(Jiangsu Changjing Technology Co.,Ltd,Jiangsu 211800,China)

机构地区：[1]江苏长晶科技有限公司

出　　处：《集成电路应用》2019年第12期16-17,共2页Application of IC

基　　金：江苏省科技企业科技创新课题项目

摘　　要：碳化硅半导体是新型材料,其热导效率高,功率大。采用碳化硅的LED器件,能耗低、亮度高、寿命长、单位面积小,具有良好的衬底效果,可以实现耐压、高功率的应用。主要用于智能网络,太阳能、动力汽车等。相比传统的贵材料,碳化硅的材料费用低,功率低,电力节约效果佳。碳化硅可以用于超200℃以上的稳定环境工作,而且碳化硅还可以有效缩短冷却负担,实现小型一体化。Silicon carbide semiconductor is a new material with high thermal conductivity and high power. The LED device with silicon carbide has the advantages of low energy consumption, high brightness, long service life, small unit area, good substrate effect, and can realize the application of pressure resistance and high power. It is mainly used in intelligent network, solar energy, power car, etc. Compared with the traditional expensive materials, silicon carbide has the advantages of low cost, low power and good power saving effect. Silicon carbide can be used to work in a stable environment above 200 ℃, and it can effectively reduce the cooling burden and realize small-scale integration.

关 键 词：集成电路 碳化硅 新材料 

分 类 号：TN304.24[电子电信—物理电子学]