瞬态闭锁试验在0.13μm大规模集成电路中引起的潜在损伤  

Latent Damage in 0.13 μm Large Scale Integrated Circuit from Transient Latchup Test

作　　者：杜川华[1] 赵洪超[1] 邓燕 DU Chuanhua;ZHAO Hongchao;DENG Yan(Institute of Electronic Engineering,China Academy of Engineering Physics,Mianyang 621999,China)

机构地区：[1]中国工程物理研究院电子工程研究所

出　　处：《原子能科学技术》2019年第12期2498-2503,共6页Atomic Energy Science and Technology

基　　金：国家自然科学基金重点项目资助(11835006)

摘　　要：瞬态剂量率辐射试验会引起集成电路发生损伤或失效,其原因至少有两种:闭锁大电流引起的电路内部金属互连熔融;累积电离总剂量引起的氧化层电荷造成阈值电压偏移。本文以一种0.13μm体硅CMOS处理器为对象,研究了瞬态剂量率和稳态电离总剂量辐射效应规律。结果表明:瞬态剂量率闭锁效应对处理器造成了显著的潜在损伤,导致其总剂量失效阈值从1030 Gy(Si)降低至600 Gy(Si)。研究结论对于大规模集成电路的可靠性评估和指导辐射加固设计有重要参考意义。There are two reasons at least for integrated circuit(IC)failure or latent damage during transient dose rate radiation test.One is the thermal breakdown of metal interconnect caused by short time high current during latchup,and another is threshold-voltage shift due to oxide-trap charge induced by ionizing radiation.In this paper,the radiation effects of transient dose rate and steady ionization total dose were studied with 0.13μm bulk silicon CMOS processor.The results show that the transient dose rate latchup effect induces significant latent damage in processor,which causes that the total dose failure threshold is reduced from 1030 Gy(Si)to 600 Gy(Si).The result is important for device reliability estimate and radiation hardness design guideline.

关 键 词：处理器 剂量率 电离总剂量 闭锁 潜在损伤 

分 类 号：TN386.1[电子电信—物理电子学]