APCVD制备二氧化硅薄膜工艺研究  

Study on Preparation of SiO2 Film by APCVD

作　　者：高丹[1] 康洪亮[1] 徐强 佟丽英[1] GAO Dan;KANG Hongliang;XU Qiang;TONG Liying(The 46th Research Institute of CETC,Tianjin 300220,China)

机构地区：[1]中国电子科技集团公司第四十六研究所

出　　处：《电子工艺技术》2019年第6期345-347,355,共4页Electronics Process Technology

摘　　要：背封技术可以有效防止硅外延过程中造成的自掺杂现象。讨论了APCVD制备二氧化硅膜工艺中膜厚、淀积温度和O2与SiH4比例等关系,分析了膜厚均匀性的影响因素和膜表面质量,提出了SiO2膜淀积的工艺条件及背封前清洗方法。Back-seal technology can effectively prevent the autodoping effect in epitaxial process. The relationship among the thickness of SiO2 film, deposition temperature and the ratio of O2 to SiH4 in the process of preparing SiO2 film is discussed by APCVD. The factors affecting the uniformity of the film thickness and the surface quality of the film are analyzed. The technological conditions for deposition of SiO2 film and the cleaning methods before back-sealing is put forward.

关 键 词：背封 APCVD SIO2膜 

分 类 号：TN305[电子电信—物理电子学]