变结构反应离子刻蚀腔室流场热场的数值仿真  

Numerical simulation of flow field and thermal field with variable struction in reactive ion etching cavity

作　　者：张景文 范斌[1] 李志炜[1] 汉语[1] ZHANG Jingwen;FAN Bin;LI Zhiwei;HAN Yu(Institute of Optics and Electronics,Chinese Academy of Sciences,Chengdu 610209,China;School of Optoelectronic Science and Engineering,University of Electronic Science and Technology of China,Chengdu 610054,China;University of Chinese Academy of Sciences,Beijing 100049,China;College of Energy and Power Engineering,Lanzhou University of Technology,Lanzhou 730050,China)

机构地区：[1]中国科学院光电技术研究所,成都610209 [2]电子科技大学光电科学与工程学院,成都610054 [3]中国科学院大学,北京100049 [4]兰州理工大学能源与动力工程学院,兰州730050

出　　处：《激光技术》2020年第1期136-142,共7页Laser Technology

基　　金：国家自然科学基金资助项目(61505216);国家重点研发计划资助项目(2016YFB0500200)

摘　　要：为了提高刻蚀的均匀性,对400mm反应离子刻蚀(RIE)腔室建立了气体流动的连续流体模型和热传递模型,研究了反应腔室内压强、流速和温度分布。冷却板恒温285K时,依次改变入口流量和出口压强,分别分析了腔室内部基片晶圆附近的流速、压强、温度的分布;依次改变极板间距离(30mm^60mm)、进气口直径(300mm^620mm)、抽气口直径(50mm^250mm),分析了反应腔室内气流和温度分布。结果表明,压强分布呈现出边缘低中心高的特征,流速呈现边缘高且中心低的特征,且在小流量时压强的均匀性较好;压强分布的均匀性随腔室极板间距离增加而有所提高,且随腔室气体出口面积减小与进口面积增加也有所提高;基片晶圆上方附近处温度场大面均匀、稳定,几乎不受入口流量波动变化的影响,热稳定性良好。该研究对大口径RIE腔室结构设计改进及对大口径反应离子刻蚀工艺控制具有重要意义。In order to improve the uniformity of etching,continuous fluid model and heat transfer model of gas flow were established for 400mm reactive ion etching(RIE)chamber.Pressure,velocity and temperature distribution in the reaction chamber were studied.When cooling plate was kept at 285K,the distributions of velocity,pressure and temperature near the wafer in the cavity were analyzed by changing the inlet flow rate and outlet pressure in turn.Then the distance between the plates(30mm^60mm),the diameter of the intake port(300mm^620mm)and the diameter of the exhaust port(50mm^250mm)were changed in turn.Air flow and temperature distribution in the reaction chamber were analyzed.The results show that,the distribution of air pressure is characterized by low edge and high center.The flow velocity is characterized by high edge and low center.The uniformity of air pressure is better at low flow rate.The uniformity of pressure distribution increases with the increase of the distance between the chamber plates.It also increases with the decrease of the outlet area and the increase of the inlet area of the chamber gas.The temperature field near the top of the wafer is uniform and stable.It is almost unaffected by the fluctuation of inlet flow.Thermal stability is good.The research results are of great significance to the structural design improvement of large-aperture RIE chamber and the control of large-aperture reactive ion etching process.

关 键 词：光学制造 反应离子刻蚀 变结构腔室 流热场分布 滑移区稀薄气体 数值模拟 

分 类 号：TN405.98[电子电信—微电子学与固体电子学]