基于GaN HEMT技术的5G高线性单片集成放大器  

A high linearity MMIC amplifier for 5G based on GaN HEMT

作　　者：张磊[1] 蔡道民[2] 银军[2] 谭仁超 ZHANG Lei;CAI Daomin;YIN Jun;TAN Renchao(Naval Representative Office of Electron Equipment Resident in Nanjing Area,Nanjing Jiangsu 210039,China;The 13th Research Institute,China Electronic Technology Corporation,Shijiazhuang Hebei 050051,China)

机构地区：[1]海军驻南京地区电子设备军事代表室,江苏南京210039 [2]中国电子科技集团公司第十三研究所,河北石家庄050051

出　　处：《太赫兹科学与电子信息学报》2019年第6期1102-1106,共5页Journal of Terahertz Science and Electronic Information Technology

摘　　要：基于0.15μm氮化镓高电子迁移率晶体管技术(GaN HEMT),研制了一款5G毫米波通信用高线性单片集成功率放大器。通过优化材料结构,使器件在较宽的栅压动态范围内具有较为平坦的跨导特性;优化设置电路的静态直流工作点,均衡输出功率和线性等指标要求;采用栅宽比为1:2:3.2的三级放大结构保证了电路的增益和功率指标。芯片的在片测试结果表明,静态直流工作点为最大饱和电流的30%;在漏极电压20 V、脉冲100μs、占空比10%条件下,在24~28 GHz频率范围内,放大器的小信号增益大于22 dB,饱和输出功率位于40~40.5 dBm范围内,功率附加效率为30%~33%;输出功率回退至34 dBm时,功率附加效率为18%,在26 GHz、双音间隔100 MHz条件下,其三阶交调(IMD3)小于-30 dBc;该单片放大器芯片尺寸小于3.4 mm×3.2 mm。Based on the 0.15μm GaN High Electron Mobility Transistor(HEMT)technology,a high linearity power amplifier Monolithic Microwave Integrated Circuit(MMIC)used for 5 G communication is designed and fabricated.By optimizing the structural material,the amplifier has a relatively smooth transconductance characteristic over a wide gate voltage dynamic range.By optimizing the setting of the static DC operating point,the output power and linearity requirements are balanced.The three-stage amplification structure with a gate width ratio of 1:2:3.2 ensures the gain and power index of the circuit.The on-wafer test results of the chip show that the small-signal gain of the MMIC is greater than 22 dB;the saturated output power is 40-40.5 dBm with above 18 dB power gain and a power added efficiency is 30%-33%over the band 24-28 GHz under testing condition of 20 V drain voltage,100μs pulse,10%duty circle;when the output power is back to 34 dBm,its Power Additional Efficiency(PAE)is 18%,and the third-order Intermodulation Distortion(IMD3)is less than-30 dBc under 26 GHz with the 100 MHz frequency offset.The chip size of the MMIC amplifier is less than 3.4 mm×3.2 mm.

关 键 词：5G 高电子迁移率晶体管 功率放大器 功率附加效率 

分 类 号：TN722[电子电信—电路与系统]