铁电负电容场效应晶体管器件的研究  

Research on Ferroelectric Negative Capacitor Field Effect Transistor Devices

作　　者：李珍 翟亚红[1] LI Zhen;ZHAI Yahong(State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China)

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室

出　　处：《压电与声光》2019年第6期782-785,共4页Piezoelectrics & Acoustooptics

基　　金：电子元器件可靠性物理及其应用技术重点实验室开放基金资助项目(ZHD201601);中央高校基本科研业务费专项基金资助项目(ZYGX2016J047)

摘　　要：铁电负电容场效应晶体管作为一种新型半导体器件,利用铁电材料的负电容效应可使晶体管的亚阈值摆幅突破理论极限值60 mV/dec,是未来低功耗晶体管领域最具有前途的器件之一。该文研究并建立了铁电负电容场效应晶体管的器件模型,采用Matlab软件对负电容场效应晶体管的器件特性进行了研究分析,获得了亚阈值摆幅为33.9176 mV/dec的负电容场效应晶体管的器件结构,探究了铁电层厚度、等效栅氧化层厚度及不同铁电材料对负电容场效应晶体管亚阈值摆幅的影响。As a new semiconductor device,the negative capacitance Field Effect Transistor(NCFET)which can break the theoretical limit of the sub-threshold swing of 60 mV/dec by using the negative capacitance effect of ferroelectric materials is one of the most promising devices in the field of low power transistors.In this paper,the device model of NCFET is studied and established.The structure of NCFET with sub-threshold swing of 33.9176 mV/dec is obtained by using the Matlab software to analyze the features of CNFETs.The influences of the different thickness of ferroelectric layer,the different thickness of equivalent gate oxide layer and the different ferroelectric materials on the sub-threshold swing of NCFET are investigated systematically.

关 键 词：铁电负电容场效应晶体管 低功耗晶体管 亚阈值摆幅 铁电材料 铁电电容 

分 类 号：TN384[电子电信—物理电子学] TM221[一般工业技术—材料科学与工程]