HfO2基铁电薄膜在循环电场载荷下的极化翻转行为  

Polarization Switching Behavior of HfO2-Based Ferroelectric Thin Films under Cyclic Electric Field Loading

作　　者：李帅东 周大雨[1] 徐进[2] 石志鑫 Uwe Schr der LI Shuai-dong;ZHOU Da-yu;XU Jin;SHI Zhi-xin;UWE Schroder(Key Laboratory of Materials Modification by Laser,Ion and Electron Beams(Ministry of Education),School of Materials Science and Engineering,Dalian University of Technology,Dalian 116024;Dalian Neusoft University of Information,Dalian 116023 China;NaMLab gGmbH,Noethnitzer Stra e 64,Dresden 01187 Germany)

机构地区：[1]大连理工大学材料科学与工程学院,三束材料改性教育部重点实验室,辽宁大连116024 [2]大连东软信息学院,辽宁大连116023 [3]NaMLab研究所,Noethnitzer大街64号,德国德累斯顿01187

出　　处：《湘潭大学学报（自然科学版）》2019年第5期104-120,共17页Journal of Xiangtan University(Natural Science Edition)

基　　金：国家自然科学基金资助项目(NSFC 51672032,51972037)

摘　　要：二氧化铪(HfO2)铁电薄膜具有优秀的CMOS工艺兼容性,10 nm以下工艺制程的微缩能力,可采用原子层沉积(ALD)技术实现在3D电容器结构中的保型生长,因此在实现低功耗、高集成密度的非易失性存储器应用方面显示出巨大的潜力.该文首先简要回顾了HfO2基铁电薄膜的发现过程和随后的国内外研究现状,然后以Si掺杂HfO2铁电薄膜在循环电场载荷下的实测结果为例,介绍了这一新型铁电材料极化翻转行为中出现的唤醒(wake-up)、疲劳和饱和极化翻转电流峰劈裂等效应,分别总结了对上述现象现有的实验和理论研究进展.HfO2 ferroelectric thin films show great potential to realize the low-power and high-density non-volatile memories because of their excellent CMOS compatibility,sub-10 nm scaling ability and conformal atomic layer deposition(ALD)process for 3-dimensional capacitor structures.In this paper,we first present a brief review of the discovery of ferroelectric hafnium oxide and subsequent studies both at home and abroad.Then taking the measurements of silicon-doped HfO2 ferroelectric thin films under cyclic electric field loading as exemplary results,the polarization switching behavior of this new-type ferroelectric material are introduced including the effects of wake-up,fatigue and split-up of saturated switching current peaks.The progress in experimental investigation and theoretical research of these effects are summarized.

关 键 词：铁电薄膜 二氧化铪 极化翻转 wake-up效应 疲劳 split-up效应 

分 类 号：TM221[一般工业技术—材料科学与工程] TQ134.1[电气工程—电工理论与新技术]