磁控溅射法制备LiTaO3薄膜及其结晶性能研究  

Preparation and Crystallization Properties of LiTaO3 Thin Films by Magnetron Sputtering

作　　者：孙斌玮 杨明 苟君 王军 蒋亚东 SUN Binwei;YANG Ming;GOU Jun;WANG Jun;JIANG Yadong(School of Optoelectronic Science and Engin.,University of Electronic Science and Technol.of China,Chengdu 610054,CHN)

机构地区：[1]电子科技大学光电科学与工程学院

出　　处：《半导体光电》2019年第6期806-809,814,共5页Semiconductor Optoelectronics

基　　金：国家自然科学基金创新研究群体项目(61421002);国家自然科学基金项目(61501092)

摘　　要：用射频磁控溅射法在Pt/Ti/SiO2/Si(100)基片上沉积了LiTaO3薄膜,并在氧气气氛中不同温度下进行退火。采用SEM、XRD、XPS等表征方法分析了薄膜的结晶性能、各元素化学价态和元素原子百分比。结果表明,经700℃退火处理1h得到的薄膜结晶性能最好,在(104)晶向上具有强烈的择优取向性。薄膜退火温度的升高导致薄膜中Li空位缺陷和O空位缺陷减少。研究表明,薄膜中O/Li的原子比对结晶性能有着非常明显的影响,原子值越接近晶体化学计量比,结晶性能越好。LiTaO3 thin films were deposited on Pt/Ti/SiO2/Si(100)substrates by radio frequency magnetron sputtering method.The crystallization behavior,chemical valence states and atomic percentage of elements were analyzed by SEM,XRD and XPS.The results show that the films annealed at 700℃ for 1 hour have the best crystallinity and strong preferred orientation in(104)direction.The increase of annealing temperature causes the decrease of Li and O vacancies in the films.The results show that the atomic ratio of O/Li has a very significant effect on the crystallinity of the LiTaO3 films.This ratio value is closer to the stoichiometric ratio of lithium tantalate crystal,the crystallization performance is better.

关 键 词：钽酸锂 铁电薄膜 射频磁控溅射 结晶性能 近化学计量比 

分 类 号：TN384[电子电信—物理电子学]