优化半绝缘GaAs双抛片精抛工艺的可行性探究  

Feasibility Study on Optimizing Semi-insulating GaAs Double Fine Polishing Process

作　　者：张雁敏 ZHANG Yanmin(th Research Institute,China Electronics Technology Group Corporation,Tianjin 300220,China)

机构地区：[1]中国电子科技集团公司第四十六研究所

出　　处：《天津科技》2020年第2期28-30,38,共4页Tianjin Science & Technology

摘　　要：半绝缘砷化镓(SI-GaAs)的抛光片作为微波大功率器件、低噪声器件等的重要衬底材料而被广泛应用。为提高产品的表面质量、良品率以及产量,同时释放部分生产力,降低生产成本,探究通过改良半绝缘砷化镓(SIGaAs)双抛片的精抛工艺,将现有的先后由单面抛光机、双面抛光机两步精抛法优化为只用双面抛光机一步精抛法的可行性。As an important substrate material for microwave high-power devices and low-noise devices, semi-insulating gallium arsenide(SI-GaAs) polishing wafers are widely used. In order to improve the surface quality, yield, and output of the product, while releasing part of the productivity and reducing production costs, the semi-insulating gallium arsenide(SIGaAs) double fine polishing process was modified, and the feasibility of optimizing the existing two-step polishing method of single-side polishing machine and double-side polishing machine to the one-step polishing method of double-side polishing machine was studied.

关 键 词：砷化镓 半绝缘砷化镓 化学机械抛光 TTV 精抛 

分 类 号：TN304.2[电子电信—物理电子学]